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Applied Physics Letters / Volume 97 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 052105 (2010); http://dx.doi.org/10.1063/1.3469939 (3 pages)

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

Elvira Fortunato1, Raquel Barros1,2, Pedro Barquinha1, Vitor Figueiredo1, Sang-Hee Ko Park3, Chi-Sun Hwang3, and Rodrigo Martins1

1Departamento de Ciência dos Materiais, CENIMAT/I3N, Faculdade de Ciências e Tecnologia, FCT, CEMOP/UNINOVA, Universidade Nova de Lisboa and, 2829-516 Caparica, Portugal
2Materiais Avançados, INNOVNANO, SA, 7600-095 Aljustrel, Portugal
3Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon 305-700, Republic of Korea

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(Received 9 February 2010; accepted 7 July 2010; published online 4 August 2010)

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈ 1016–1018 cm−3; electrical resistivity between 101–102 Ω cm; Hall mobility around 4.8 cm2/V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2/V s and an ON/OFF modulation ratio of 103.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, carrier density, crystal structure, electrical resistivity, Hall mobility, semiconductor materials, sputter deposition, thin film transistors, tin compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3469939

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    K. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 202107 (2008)APPLAB000093000020202107000001.

    Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 032113 (2008)APPLAB000093000003032113000001.

    I. Lefebvre, M. A. Szymanski, J. Olivier-Fourcade, and J. C. Jumas, Phys. Rev. B 58, 1896 (1998).

    A. Togo, F. Oba, I. Tanaka, and K. Tatsumi, Phys. Rev. B 74, 195128 (2006).


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