Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Hwang, Inrok; Lee, Myung-Jae; Buh, Gyoung-Ho; Bae, Jieun; Choi, Jinsik; Kim, Jin-Soo; Hong, Sahwan; Kim, Yeon Soo; Byun, Ik-Su; Lee, Seung-Woong; Ahn, Seung-Eon; Kang, Bo Soo; Kang, Sung-Oong; Park, Bae Ho

doi:doi:10.1063/1.3477953

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Transparent p-type SnO_x thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈ 1016–1018 cm−3; electrical resistivity between 101–102 Ω cm; Hall mobility around 4.8 cm2/V s; optical band gap of 2.8 eV; an...

Effect of n⁺GaN cap polarization field on Cs-free GaN photocathode characteristics

We report on a Cs-free GaN photocathode structure in which band engineering at the photocathode surface caused by Si delta doping eliminates the need for use of cesium for photocathode activation. The structure is capped with a highly doped n+GaN layer. We have identified that n+GaN cap thickness plays an important role in limiting the effect of polarization induced charges at the GaN surface on the photocathode emission threshold. Physics based device simulations is used for further analysis o...

We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10⁻² and 10⁻⁴ s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiO_x, we have proposed a model in which the migration of oxygen ions (O²⁻) is responsible for the switching transition in Pt/NiO/Pt structures.

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KEYWORDS and PACS

Keywords

electrical conductivity transitions, MIM structures, nickel compounds, platinum

PACS

73.40.Rw

Metal-insulator-metal structures
72.60.+g

Mixed conductivity and conductivity transitions
71.30.+h

Metal-insulator transitions and other electronic transitions

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http://dx.doi.org/10.1063/1.3477953

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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