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Applied Physics Letters / Volume 97 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 052107 (2010); http://dx.doi.org/10.1063/1.3476341 (3 pages)

Effect of n+GaN cap polarization field on Cs-free GaN photocathode characteristics

N. Tripathi1, L. D. Bell2, S. Nikzad2, and F. Shahedipour-Sandvik1

1College of Nanoscale Science and Engineering, University at Albany, Albany, New York 12203, USA
2Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA

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(Received 27 April 2010; accepted 13 July 2010; published online 6 August 2010)

We report on a Cs-free GaN photocathode structure in which band engineering at the photocathode surface caused by Si delta doping eliminates the need for use of cesium for photocathode activation. The structure is capped with a highly doped n+GaN layer. We have identified that n+GaN cap thickness plays an important role in limiting the effect of polarization induced charges at the GaN surface on the photocathode emission threshold. Physics based device simulations is used for further analysis of the experimental results. Our findings clearly illustrate the impact of polarization induced surface charges on the device properties including its emission threshold.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, gallium compounds, III-V semiconductors, photocathodes, semiconductor doping, silicon, surface charging

PACS

  • 85.60.Ha

    Photomultipliers; phototubes and photocathodes

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 61.72.uj

    III-V and II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476341

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Uchiyama, Y. Takagi, M. Niigaki, H. Kan, and H. Kondoh, Appl. Phys. Lett. 86, 103511 (2005)APPLAB000086000010103511000001.

    I. V. Bazarov, B. M. Dunham, X. Liu, M. Virgo, A. M. Dabiran, F. Hannon, and H. Sayed, J. Appl. Phys. 105, 083715 (2009)JAPIAU000105000008083715000001.

    S. Barbet, R. Aubry, M. -A. di Forte-Poisson, J. -C. Jacquet, D. Deresmes, T. Mélin, and D. Théron, Appl. Phys. Lett. 93, 212107 (2008)APPLAB000093000021212107000001.

    J. C. Brewer, R. J. Walters, L. D. Bell, D. B. Farmer, R. G. Gordon, and H. A. Atwater, Appl. Phys. Lett. 85, 4133 (2004)APPLAB000085000018004133000001.


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