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Applied Physics Letters / Volume 97 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 052108 (2010); http://dx.doi.org/10.1063/1.3476352 (3 pages)

Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials

Dmitry Donetsky1, Gregory Belenky1,2, Stefan Svensson3, and Sergei Suchalkin1,2

1Department of Electrical and Computer Engineering, Stony Brook University, New York 11794, USA
2Power Photonic Corp., 25 Health Sciences Dr., Stony Brook, New York 11790, USA
3U.S. Army Research Laboratory, 2800 Powder Mill Rd., Adelphi, Maryland 20783, USA

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(Received 2 July 2010; accepted 19 July 2010; published online 6 August 2010)

Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley–Read–Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cadmium compounds, carrier lifetime, electron-hole recombination, gallium compounds, III-V semiconductors, II-VI semiconductors, indium compounds, internal stresses, mercury compounds, minority carriers, photoluminescence, semiconductor superlattices

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.05.Dz

    II-VI semiconductors

  • 73.63.-b

    Electronic transport in nanoscale materials and structures

  • 78.67.Pt

    Multilayers; superlattices; photonic structures; metamaterials

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 78.55.Cr

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476352

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    V. Gopal, E. Plis, J. -B. Rodrigues, C. E. Jones, L. Faraone, and S. Krishna, J. Appl. Phys. 104, 124506 (2008)JAPIAU000104000012124506000001.

    Y. Chang, C. H. Grein, J. Zhao, C. R. Becker, M. E. Flatte, P. -K. Liao, F. Aqariden, and S. Sivananthan, Appl. Phys. Lett. 93, 192111 (2008)APPLAB000093000019192111000001.

    J. Li, S. L. Chuang, E. M. Jackson, and E. Aifer, Appl. Phys. Lett. 85, 1984 (2004)APPLAB000085000011001984000001.

    D. Donetsky, S. P. Svensson, L. E. Vorobjev, and G. Belenky, Appl. Phys. Lett. 95, 212104 (2009)APPLAB000095000021212104000001.

    D. Wang, S. P. Svensson, L. Shterengas, G. Belenky, C. S. Kim, I. Vurgaftman, and J. R. Meyer, J. Appl. Phys. 105, 014904 (2009)JAPIAU000105000001014904000001.

    H. J. Haugan, K. Mahalingam, G. J. Brown, W. C. Mitchel, B. Ullrich, L. Grazulis, S. Elhamri, J. C. Wickett, and D. W. Stokes, J. Appl. Phys. 100, 123110 (2006)JAPIAU000100000012123110000001.

    M. E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, D. J. Lang, J. T. Olesberg, and T. F. Boggess, Phys. Rev. B 59, 5745 (1999).

    E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, C. H. Grein, P. M. Young, H. Ehrenreich, R. H. Miles, and D. H. Chow, Appl. Phys. Lett. 64, 3160 (1994)APPLAB000064000023003160000001.

    S. Krishnamurthy and M. A. Berding, J. Appl. Phys. 90, 848 (2001)JAPIAU000090000002000848000001.

    S. K. Singh, B. D. McCombe, J. Kono, S. J. Allen, Jr., I. Lo, W. C. Mitchel, and C. E. Stutz, Phys. Rev. B 58, 7286 (1998).

    D. N. Talwar and M. Vandevyer, J. Appl. Phys. 56, 1601 (1984)JAPIAU000056000006001601000001.


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