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Applied Physics Letters / Volume 97 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 052110 (2010); http://dx.doi.org/10.1063/1.3475018 (3 pages)

Subgrain size inhomogeneities in the luminescence spectra of thin film chalcopyrites

Levent Gütay1, Christoph Lienau2, and Gottfried Heinrich Bauer2

1Laboratory for Photovoltaics, University of Luxembourg, L-4422 Belvaux, Luxembourg
2Institute of Physics, University of Oldenburg, D-26111 Oldenburg, Germany

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(Received 26 March 2010; accepted 10 July 2010; published online 6 August 2010)

We report near-field photoluminescence (PL) spectra of Cu(InGa)Se2 thin films recorded with a lateral optical resolution of ≈200 nm and simultaneous detection of the sample topography. Our results reveal significant local variations in the PL spectra, specifically the PL yield, on length scales of 0.2–1.5 μm. Local variations in both the splitting of quasi-Fermi levels μ and the band gap energy are quantitatively extracted from the PL spectra by applying Planck’s generalized law. We show pronounced fluctuations of μ and the band gap on length scales below the grain size. These fluctuations are only weakly correlated with the topographic film structure.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper compounds, energy gap, Fermi level, gallium compounds, grain size, indium compounds, photoluminescence, semiconductor thin films, ternary semiconductors

PACS

  • 78.55.Hx

    Other solid inorganic materials

  • 81.40.-z

    Treatment of materials and its effects on microstructure, nanostructure, and properties

  • 78.66.Li

    Other semiconductors

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475018

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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