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Applied Physics Letters / Volume 97 / Issue 5 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 97, 052903 (2010); http://dx.doi.org/10.1063/1.3476358 (3 pages)

Effect of polarization-memory in SrTiO3/La0.9Sr0.1MnO3 multilayer on Si substrate

Yingtang Zhang1,2, Yiming Zhang1, and Shengtao Li2

1School of Material Science and Engineering, Institute of Functional Material, Shaanxi University of Technology, Hanzhong 723003, People's Republic of China
2State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, People's Republic of China

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(Received 13 April 2010; accepted 1 July 2010; published online 5 August 2010)

SrTiO3/La0.9Sr0.1MnO3 (STO/LSMO) multilayer was fabricated on n-Si (100) substrate by using a computer-controlled laser molecular-beam epitaxy technique. A rectifying behavior was observed in the multilayer. Meanwhile, the capancitance-voltage (C-V) characteristics were investigated, which reveals a hysteresis memory effect in forward and backward bias regions. A detail study suggests that the hysteresis behaviors originate from the cooperation and competition between the interfacial polarization and trapping/detrapping mechanisms. Our results are expected to meet the high desire of the optimization and device design of random access memory.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

hysteresis, lanthanum compounds, molecular beam epitaxial growth, multilayers, random-access storage, semiconductor materials, semiconductor storage, strontium compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476358

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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