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Applied Physics Letters / Volume 97 / Issue 5 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 97, 052904 (2010); http://dx.doi.org/10.1063/1.3473773 (3 pages)

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

A. O’Mahony1, S. Monaghan1, G. Provenzano1,2, I. M. Povey1, M. G. Nolan1, É. O’Connor1, K. Cherkaoui1, S. B. Newcomb3, F. Crupi2, P. K. Hurley1, and M. E. Pemble1

1Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland
2Dipartimento di Elettronica, Informatica e Sistemistica, Università della Calabria, Via P. Bucci, 41C I-87036 Arcavacata di Rende (CS), Italy
3Glebe Laboratories, Glebe Scientific Ltd., Newport, County Tipperary, Ireland

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(Received 30 March 2010; accepted 25 June 2010; published online 6 August 2010)

High mobility III-V substrates with high-k oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of Al2O3. A thin ( ∼ 1 nm) Al2O3 interface control layer is deposited on In0.53Ga0.47As prior to HfO2 growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by ∼ 50% while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the In0.53Ga0.47As native oxides.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic layer deposition, band structure, capacitors, current density, gallium arsenide, hafnium compounds, III-V semiconductors, indium compounds, leakage currents

PACS

  • 84.32.Tt

    Capacitors

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3473773

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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