APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 97 / Issue 5 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 053101 (2010); http://dx.doi.org/10.1063/1.3475923 (3 pages)

Self-assembled GaAs islands on Si by droplet epitaxy

C. Somaschini1, S. Bietti1, N. Koguchi1, F. Montalenti1, C. Frigeri2, and S. Sanguinetti1

1Dip. di Scienza dei Materiali, L-NESS, Universitá di Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy
2IMEM-CNR, Parco Area delle Scienze 37/A, 43100 Parma, Italy

View MapView Map

(Received 10 May 2010; accepted 14 July 2010; published online 2 August 2010)

We presented an innovative fabrication technique for the self-assembly of GaAs islands on Si substrates by droplet epitaxy. The islands show highly tunable density (from 107 to some 109 islands/cm2) and size (from 75 to 250 nm), and small size dispersion (below 10%). The islands, made by single relaxed crystals with lattice parameters close to the GaAs bulk, show well defined shapes, with a high aspect ratio. The low thermal budget required for the island self-assembly, together with the high scalability of the process, make these islands good candidates for local artificial substrates or local strain sources with the required lattice parameters, band alignment, and crystalline quality as now required for the implementation of high quality devices on Si.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

epitaxial growth, gallium arsenide, III-V semiconductors, island structure, lattice constants, self-assembly, semiconductor epitaxial layers, semiconductor growth

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475923

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Z. Zhao, Z. Hao, K. Yadavalli, K. L. Wang, and A. P. Jacob, Appl. Phys. Lett. 92, 083111 (2008)APPLAB000092000008083111000001.

    P. S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, and D. L. Huffaker, Appl. Phys. Lett. 90, 183103 (2007)APPLAB000090000018183103000001.

    T. Tran, A. Muller, C. K. Shih, P. S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, and D. L. Huffaker, Appl. Phys. Lett. 91, 133104 (2007)APPLAB000091000013133104000001.

    Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).

    D. E. Jesson, G. Chen, K. M. Chen, and S. J. Pennycook, Phys. Rev. Lett. 80, 5156 (1998).

    L. G. Wang, P. Kratzer, M. Scheffler, and N. Moll, Phys. Rev. Lett. 82, 4042 (1999).

    Z. Zhong and G. Bauer, Appl. Phys. Lett. 84, 1922 (2004)APPLAB000084000011001922000001.

    S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, and D. Chrastina, Appl. Phys. Lett. 95, 241102 (2009)APPLAB000095000024241102000001.

    V. Spagnolo, G. Scamarcio, R. Colombelli, J. -M. Jancu, F. Beltram, L. Sorba, B. Meüller, and A. Franciosi, Phys. Rev. B 57, R15100 (1998).

    Z. M. Zhao, O. Hulko, T. S. Yoon, and Y. H. Xie, J. Appl. Phys. 98, 123526 (2005)JAPIAU000098000012123526000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Self-assembled GaAs islands on Si by droplet epitaxy
  2. Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
  3. Effect of polarization-memory in SrTiO3/La0.9Sr0.1MnO3 multilayer on Si substrate
  4. Quantitative determination of anisotropic magnetoelectric coupling in BiFeO3–CoFe2O4 nanostructures
  5. Strontium-induced ferroelectriclike relaxor behavior in Bi-based pyrochlores
Go to AIP Home
Copyright © American Institute of Physics
close