APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 97 / Issue 5 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 053102 (2010); http://dx.doi.org/10.1063/1.3473770 (3 pages)

Amplified nanopatterning by self-organized shadow mask ion lithography

D. Chiappe, A. Toma, Z. Zhang, C. Boragno, and F. Buatier de Mongeot

Dipartimento di Fisica, Università degli Studi di Genova and CNISM, via Dodecaneso 33, 16146 Genova, Italy

View MapView Map

(Received 25 November 2009; accepted 2 July 2010; published online 2 August 2010)

The self-organized formation of high aspect ratio dielectric nanostructures can be guided and sped-up recurring to a sacrificial metal film during ion beam sputtering. Following ion irradiation, the metal film evolves into a disconnected array of laterally ordered nanowires, which guide etching of the dielectric substrate. While the amplification rate of large scale features can be described simply in terms of the ratio of the sputtering yields of substrate and film, for small scale features the amplification rate depends on the interplay and lateral range of the smoothing and erosive mechanisms of the two materials.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

ion beam lithography, masks, nanolithography, nanopatterning, sputtering

PACS

  • 85.40.Hp

    Lithography, masks and pattern transfer

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3473770

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    F. Buatier de Mongeot, A. Toma, A. Molle, S. Lizzit, L. Petaccia, and A. Baraldi, Phys. Rev. Lett. 97, 056103 (2006).

    A. Toma, D. Chiappe, D. Massabò, C. Boragno, and F. Buatier de Mongeot, Appl. Phys. Lett. 93, 163104 (2008)APPLAB000093000016163104000001.

    W. L. Chan and E. Chason, J. Appl. Phys. 101, 121301 (2007)JAPIAU000101000012121301000001.

    B. Davidovitch, M. J. Aziz, and M. P. Brenner, Phys. Rev. B 76, 205420 (2007).

    A. Toma, D. Chiappe, B. Šetina Batič, M. Godec, M. Jenko, and F. Buatier de Mongeot, Phys. Rev. B 78, 153406 (2008).

    A. Toma, B. Šetina Batič, D. Chiappe, C. Boragno, U. Valbusa, M. Godec, M. Jenko, and F. Buatier de Mongeot, J. Appl. Phys. 104, 104313 (2008)JAPIAU000104000010104313000001.

    I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. 78, 013705 (2007)RSINAK000078000001013705000001.

    A. Toma, D. Chiappe, C. Boragno, and F. Buatier de Mongeot, Phys. Rev. B 81, 165436 (2010).

    E. A. Eklund, R. Bruinsma, J. Rudnick, and R.. S. Williams, Phys. Rev. Lett. 67, 1759 (1991).

    C. C. Umbach, R. L. Headrick, and K. -C. Chang, Phys. Rev. Lett. 87, 246104 (2001).


For access to citing articles, you need to log in.


Figures (2)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Amplified nanopatterning by self-organized shadow mask ion lithography
  2. Self-assembled GaAs islands on Si by droplet epitaxy
  3. Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
  4. Effect of polarization-memory in SrTiO3/La0.9Sr0.1MnO3 multilayer on Si substrate
  5. Quantitative determination of anisotropic magnetoelectric coupling in BiFeO3–CoFe2O4 nanostructures
Go to AIP Home
Copyright © American Institute of Physics
close