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Appl. Phys. Lett. 97, 053104 (2010); http://dx.doi.org/10.1063/1.3467262 (3 pages)

Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires

Liangzhi Kou1,2, Chun Li3, Zi-Yue Zhang1, Changfeng Chen2, and Wanlin Guo1

1Institute of Nano Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
2Department of Physics and High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, USA
3School of Mechanics, Civil Engineering, and Architecture, Northwestern Polytechnical University, Xi’an 710072, China

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(Received 24 May 2010; accepted 29 June 2010; published online 2 August 2010)

We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectively. Such separation can be enhanced by axially applied tensile strain as a result of the enhancement of surface strain induced by the Poisson effect, and be suppressed by compressive axial strain. Similar carrier separations are found in IIB-sulfides. This intrinsic charge separation and tensile strain induced enhancement are expected to shed light on solar cell designs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.21.Hb

    Quantum wires

  • 81.40.Lm

    Deformation, plasticity, and creep

  • 62.20.F-

    Deformation and plasticity

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 81.40.Jj

    Elasticity and anelasticity, stress-strain relations

  • 62.20.dj

    Poisson's ratio

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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