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Applied Physics Letters / Volume 97 / Issue 5 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 053105 (2010); http://dx.doi.org/10.1063/1.3475399 (3 pages)

Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator

O. Moutanabbir1, M. Reiche1, A. Hähnel1, M. Oehme2, and E. Kasper2

1Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) 06120, Germany
2Institute for Semiconductor Engineering, Universität Stuttgart, Stuttgart 70569, Germany

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(Received 28 April 2010; accepted 11 July 2010; published online 2 August 2010)

We developed a heterostructure to assess accurately the strain evolution upon nanopatterning of 15 nm thick tensile strained silicon-on-insulator (SSOI). Here the long-standing concern of substrate background in micro-Raman analysis was circumvented by the introduction of a Ge layer underneath the buried oxide. Unprecedented insights into the strain behavior in SSOI nanostructures were obtained by combining deep UV and visible micro-Raman probes. We found that the formation of edges results in a strong relaxation near the surface parallel to an increase in the strain at the Si/oxide interface. This disparity in the strain evolution between surface and interface leads to the coexistence of compressive and tensile strained regions within the same structure at a lateral dimension of 50 nm. This heterogeneous distribution of strain should be taken into account in the design and fabrication of SSOI-based nanodevices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

nanopatterning, nanostructured materials, Raman spectra, silicon-on-insulator, substrates, ultraviolet spectra

PACS

  • 81.16.Rf

    Micro- and nanoscale pattern formation

  • 78.30.Am

    Elemental semiconductors and insulators

  • 78.40.Fy

    Semiconductors

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475399

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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