APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 97 / Issue 5 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 053106 (2010); http://dx.doi.org/10.1063/1.3474615 (3 pages)

Selective growth and piezoelectric properties of highly ordered arrays of vertical ZnO nanowires on ultrathin alumina membranes

Liaoyong Wen1,2, Zhengzheng Shao2, Yaoguo Fang1, Kin Mun Wong3, Yong Lei3, Lifeng Bian2, and Gerhard Wilde3

1Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 201800, People’s Republic of China
2Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215125, People’s Republic of China
3Institute of Materials Physics and Center for Nanotechnology, University of Muenster, Wilhelm-Klemm-Str. 10, 48149 Muenster, Germany

View MapView Map

(Received 29 June 2010; accepted 8 July 2010; published online 3 August 2010)

A well controlled and cost effective method of fabricating highly ordered arrays of vertical zinc oxide (ZnO) nanowires or nanopores is demonstrated where an ultrathin alumina membrane (UTAM) itself is utilized as a substrate for the selective growth of the ordered arrays. A thin film of gold was thermally evaporated on the UTAM followed by the growth of highly regular ZnO nanowires using chemical vapor deposition (CVD). Alternatively, highly ordered ZnO nanopores arrays were also grown by CVD on the bare UTAM. Additionally, piezoelectric currents were generated from the ZnO nanowires during the conductive atomic force microscopy probe tip scan across the array.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

atomic force microscopy, chemical vapour deposition, II-VI semiconductors, nanofabrication, nanoporous materials, nanowires, piezoelectricity, Schottky barriers, semiconductor growth, semiconductor quantum wires, wide band gap semiconductors, zinc compounds

PACS

  • 81.07.Gf

    Nanowires

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 77.65.-j

    Piezoelectricity and electromechanical effects

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3474615

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. W. Kim, S. Fujita, and S. Fujita, Appl. Phys. Lett. 86, 153119 (2005)APPLAB000086000015153119000001.

    S. P. Anthony, J. I. Lee, and J. K. Kim, Appl. Phys. Lett. 90, 103107 (2007)APPLAB000090000010103107000001.

    T. F. Chung, L. B. Luo, Z. B. He, Y. H. Leung, I. Shafiq, Z. Q. Yao, and S. T. Lee, Appl. Phys. Lett. 91, 233112 (2007)APPLAB000091000023233112000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Selective growth and piezoelectric properties of highly ordered arrays of vertical ZnO nanowires on ultrathin alumina membranes
  2. Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator
  3. Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires
  4. Aqueous-based synthesis of atomic gold clusters: Geometry and optical properties
  5. Amplified nanopatterning by self-organized shadow mask ion lithography
Go to AIP Home
Copyright © American Institute of Physics
close