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Applied Physics Letters / Volume 97 / Issue 5 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 053107 (2010); http://dx.doi.org/10.1063/1.3471396 (3 pages)

Controlling the electrical transport properties of graphene by in situ metal deposition

Yujie Ren1,2, Shanshan Chen2,3, Weiwei Cai2,3, Yanwu Zhu2, Chaofu Zhu1, and Rodney S. Ruoff2

1School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
2Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA
3Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China

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(Received 19 May 2010; accepted 8 July 2010; published online 3 August 2010)

The deposition effect of metals on graphene was studied by in situ field effect transistor (FET) measurements in high vacuum. Metals such as gold (Au), silver (Ag), and copper (Cu) were deposited onto clean graphene surfaces, followed by FET measurements. The results show that Ag and Cu cause a shift in the Fermi level in the graphene from the Dirac point into the conduction band while Au causes a shift into the valence band. The induced carrier concentration was estimated at 2–6×1012/cm2. The shifts in the Fermi level of the graphene are explained by the different work functions of these metals.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, conduction bands, copper, Fermi level, gold, graphene, metal-insulator boundaries, metallic thin films, silver, surface states, vacuum deposition, valence bands, work function

PACS

  • 73.63.-b

    Electronic transport in nanoscale materials and structures

  • 73.22.Pr

    Electronic structure of graphene

  • 73.20.At

    Surface states, band structure, electron density of states

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 81.15.Dj

    E-beam and hot filament evaporation deposition

  • 68.55.A-

    Nucleation and growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3471396

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008).

    H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977)JAPIAU000048000011004729000001.

    K. H. Wu, Y. Fujikawa, T. Nagao, Y. Hasegawa, K. S. Nakayama, Q. K. Xue, E. G. Wang, T. Briere, V. Kumar, Y. Kawazoe, S. B. Zhang, and T. Sakurai, Phys. Rev. Lett. 91, 126101 (2003), J. L. Li, J. F. Jia, X. J. Liang, X. Liu, J. Z. Wang, Q. K. Xue, Z. Q. Li, J. S. Tse, Z. Y. Zhang, and S. B. Zhang, ibid. 88, 066101 (2002).


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