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Applied Physics Letters / Volume 97 / Issue 5 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 053301 (2010); http://dx.doi.org/10.1063/1.3473775 (3 pages)

Low-power write-once-read-many-times memory devices

Jianpu Wang, Feng Gao, and Neil C. Greenham

Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

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(Received 2 April 2010; accepted 29 June 2010; published online 2 August 2010)

We introduce low-power write-once-read-many-times memory devices fabricated from solution. These devices are based on an electron-only structure using colloidal ZnO semiconductor nanoparticles and the doped conjugated polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT:PSS). The conductive p-doped conjugated polymer is permanently dedoped by injected electrons, producing an insulating state. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power-consumption applications, such as radio-frequency identification tags.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

conducting polymers, II-VI semiconductors, low-power electronics, nanoparticles, optical disc storage, write-once storage, zinc compounds

PACS

  • 84.30.Sk

    Pulse and digital circuits

  • 42.79.Vb

    Optical storage systems, optical disks

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3473775

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. S. Steudel, K. Myny, V. Arkhipov, C. Deibel, S. De Vusser, J. Genoe, and P. Heremans, Nature Mater. 4, 597 (2005). [MEDLINE]
  2. Y. Noh, N. Zhao, M. Caironi, and H. Sirringhaus, Nat. Nanotechnol. 2, 784 (2007). [MEDLINE]
  3. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Nature (London) 445, 745 (2007). [MEDLINE]
  4. V. Subramanian, P. C. Chang, J. B. Lee, S. E. Molesa, and S. K. Volkman, IEEE Trans. Compon. Packag. Technol. 28, 742 (2005).
  5. B. C. de Brito, E. Smiths, P. van Hal, T. Geuns, B. de Boer, C. Lasance, H. Gomes, and D. de Leeuw, Adv. Mater. (Weinheim, Ger.) 20, 3750 (2008).
  6. S. Möller, C. Perlov, W. Jackson, C. Taussig, and S. R. Forrest, Nature (London) 426, 166 (2003). [MEDLINE]
  7. C. Pacholski, A. Kornowski, and H. Weller, Angew. Chem., Int. Ed. 41, 1188 (2002). [MEDLINE]
  8. B. Sun and H. Sirringhaus, Nano Lett. 5, 2408 (2005). [MEDLINE]
  9. S. Möller, S. R. Forrest, C. Perlov, W. Jackson, and C. Taussig, J. Appl. Phys. 94, 7811 (2003)JAPIAU000094000012007811000001.
  10. J. -S. Kim, P. K. H. Ho, C. E. Murphy, N. Baynes, and R. H. Friend, Adv. Mater. (Weinheim, Ger.) 14, 206 (2002). [ISI]
  11. G. Greczynski, T. Kugler, M. Keil, W. Osikowicz, M. Fahlman, and W. Salaneck, J. Electron Spectrosc. Relat. Phenom. 121, 1 (2001).
  12. P. -J. Chia, L. Chua, S. Sivaramakrishnan, J. Zhuo, L. Zhao, W. Sim, Y. Yeo, and P. Ho, Adv. Mater. (Weinheim, Ger.) 19, 4202 (2007).
  13. A. Hagfeldt and M. Grätzel, Chem. Rev. (Washington, D.C.) 95, 49 (1995). [ISI]

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Figures (click on thumbnails to view enlargements)

FIG.1
Schematic device structure and energy level diagram. Energy levels are taken from Refs. 6 , 13.

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FIG.2
(a) Current-voltage curve for an ITO/ZnO/PEDOT:PSS/Al device. The inset shows the same data on semilogarithmic axes. (b) Current density as a function of time for devices after application of a fixed voltage. (c) Current-voltage curves for an ITO/ZnO/PEDOT:PSS/Al device measured from 0 V–1 V–0 V–1.5 V–0 V–3 V–0 V. Scan rate for (a) and (c) 0.1 V s−1.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
ITO/ZnO/PEDOT:PSS/Al device performance with various PEDOT:PSS layer thickness. (a) 30 nm. (b) 50 nm, and (c) 80 nm. The measurements were performed using the pulse mode of an Agilent 4155B Semiconductor Parameter Analyzer. The pulse period was 20 ms, and the pulse duration was 10 ms. Different curves denote different voltage steps (as shown in the figure) between pulses. Larger steps give higher interruption currents and voltages.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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