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Applied Physics Letters / Volume 97 / Issue 5 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 053304 (2010); http://dx.doi.org/10.1063/1.3457171 (3 pages)

High performance organic transistors: Percolating arrays of nanotubes functionalized with an electron deficient olefin

Mandakini Kanungo1, George G. Malliaras2, and Graciela B. Blanchet3

1Xerox Research Center, Mail Stop 147-59B, 800 Philips Road, Webster, New York 14580, USA
2Department of Bioelectronics, Ecole Nationale Supérieure des Mines de Saint Etienne, 880 Route de Mimet, 13541 Gardanne, France
3CTO, Nano Terra, Inc., 790 Memorial Drive, Suite 202, Cambridge, Massachusetts 02139, USA

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(Received 21 March 2010; accepted 26 May 2010; published online 3 August 2010)

Precise control over the electronic properties of carbon nanotubes is key to their application in plastic electronics. In the present work, we have functionalized carbon nanotubes with an electron withdrawing nonfluorinated olefins via a 2−2 cycloaddition reaction. Our results suggest that the formation of cyclobutanelike four-member ring at the functionalization site is a fairly general approach, independent of specifics of the addend, to converting the grown mixture of metal and semiconductor tubes into high mobility semiconducting tubes without tedious separation requirements. Thin film transistors fabricated from such functionalized tubes exhibit mobilities of ∼ 30 cm2/V s and on/off ratios in excess of 106. This simple functionalization represents a low cost path to high performance semiconducting inks for printable electronics.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon nanotubes, thin film transistors

PACS

  • 73.22.-f

    Electronic structure of nanoscale materials and related systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457171

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. H. Peng, N. T. Alvarez, C. Kittrell, R. H. Hauge, and H. K. Schimdt, J. Am. Chem. Soc. 128, 8396 (2006). [MEDLINE]
  2. M. S. Arnold, A. A. Green, J. F. Hulvat, S. I. Stupp, and M. C. Hersam, Nature Nanotechnology 1, 60 (2006). [MEDLINE]
  3. E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park, Appl. Phys. Lett. 82, 2145 (2003)APPLAB000082000013002145000001.
  4. M. S. Strano C. A. Dyke, M. L. Usrey, P. W. Barone, M. J. Allen, H. Shan, C. Kittrell, R. H. Hauge, J. M. Tour, and R. E. Smalley, Science 301, 1519 (2003). [MEDLINE]
  5. Z. Chen, K. J. Ziegler, J. Shaver, R. H. Hauge, and R. E. Smalley, J. Phys. Chem. B 110, 11624 (2006). [Inspec]
  6. C. A. Dyke and J. M. Tour, Chem.-Eur. J. 10, 812 (2004). [MEDLINE]
  7. M. V. Veloso, A. G. Souza Filho, J. Mendes Filho, S. B. Fagan, and R. Mota, Chem. Phys. Lett. 430, 71 (2006). [Inspec]
  8. H. Park, J. Zhao, and J. P. Lu, Nanotechnology 16, 635 (2005). [ISI]
  9. W. -J. Kim, M. L. Ursey, and M. S. Strano, Chem. Mater. 19, 1571 (2007). [Inspec]
  10. P. Delaney, H. J. Choi, J. Ihm, S. G. Louie, and M. L. Cohen, Nature (London) 391, 466 (1998).
  11. J. Zhao, H. Park, J. Han, and J. P. Lu, J. Phys. Chem. 108, 4227 (2004).
  12. H. Hu, B. Zhao, M. A. Hamon, K. Kamaras, N. E. Itkis, and R. C. Haddon, J. Am. Chem. Soc. 125, 14893 (2003). [ISI] [MEDLINE]
  13. C. A. Dyke and J. M. Tour, J. Am. Chem. Soc. 125, 1156 (2003). [ISI] [MEDLINE]
  14. E. T. Mickelson, C. B. Huffmann, A. G. Rinzler, R. E. Smalley, R. H. Hauge, and J. L. Margrave, Chem. Phys. Lett. 296, 188 (1998).
  15. P. W. Chiu, G. S. Duesberg, U. Dettlaff-Weglikowska, and S. Roth, Appl. Phys. Lett. 80, 3811 (2003)APPLAB000080000020003811000001. [ISI]
  16. K. A. Park, Y. S. Choi, and Y. H. Lee, Phys. Rev. B 68, 045429 (2003).
  17. Y. S. Lee and N. Marzari, Phys. Rev. Lett. 97, 116801 (2006). [MEDLINE]
  18. H. Park, J. Zhao, and J. P. Lu, Nano Lett. 6, 916 (2006). [MEDLINE]
  19. Y. S. Lee and N. Marzari, J. Phys. Chem. C 112, 4480 (2008).
  20. C. Ménard-Moyon, N. Izard, E. Doris, and C. Mioskowski, J. Am. Chem. Soc. 128, 6552 (2006). [MEDLINE]
  21. K. Kamaras, M. E. Itkis, H. Hu, B. Zhao, and R. C. Haddon, Science 301, 1501 (2003). [ISI] [MEDLINE]
  22. M. Kanungo, H. L. Lu, G. G. Malliaras, and G. B. Blanchet, Science 323, 234 (2009). [MEDLINE]
  23. R. Voggu, C. S. Rout, A. D. Franklin, T. S. Fisher, and C. N. Rao, J. Phys. Chem. C 112, 13053 (2008).
  24. V. Meunier and B. Sumpter, J. Chem. Phys. 123, 024705 (2005)JCPSA6000123000002024705000001. [ISI]
  25. J. Oh, S. Roh, W. Yi, H. Lee, and J. Yoo, J. Vac. Sci. Technol. B 22, 1416 (2004)JVTBD9000022000003001416000001.
  26. T. Takenobu, T. Takano, M. Shiraishi, Y. Murakami, M. Ata, H. Kataura, Y. Achiba, and Y. Iwasa, Nature Mater. 2, 683 (2003). [MEDLINE]
  27. See supplementary material at http://dx.doi.org/10.1063/1.3457171 for materials and methods and characterization of functionalized tubes. [EPAPS]
  28. M. S. Dresselhaus, G. Dresselhaus, and R. Saito, Phys. Rep. 47, 409 (2005).

Figures (click on thumbnails to view enlargements)

FIG.1
(a) Plot of off current, on current, and linear mobility of all measured devices as a function of TCNE/SWNT/molar concentration ratio c, W, and L are 200 μm and 20 μm, respectively, the source-drain voltage Vds = −0.1 V. (b) Plot of source-drain current vs gate voltage for FSWNT-TCNE TFT at c = 0.014.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
[(a)–(d)] AFM images of (a) pristine and [(b)–(d)] functionalized SWNTs at c = 0.007, 0.014, and 0.055.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) Optical spectra of pristine HiPco tubes and the TCNE functionalized tubes. (b) IR spectra of pristine and functionalized TCNE at c = 0.014 showing the CN IR stretching mode of TCNE at 2200 cm−1. [(c) and (d)] Raman spectra of pristine and TCNE functionalized tubes; (c) RBM (d) and tangential and disorder mode region at 514 nm excitation wavelength. Spectra are normalized to the 1591 cm−1 band.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Supplemental Files (EPAPS)



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