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Applied Physics Letters / Volume 97 / Issue 5 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 053305 (2010); http://dx.doi.org/10.1063/1.3474654 (3 pages)

Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices

Lichang Zeng1, Ching W. Tang1, and Shaw H. Chen1,2

1Department of Chemical Engineering, University of Rochester, Rochester, New York 14627, USA
2Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623, USA

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(Received 18 June 2010; accepted 4 July 2010; published online 4 August 2010)

The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li+ diffusion from the LiF/Al contact.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, current density, fullerenes, phase separation, photoconducting devices, polymer blends, polymer films, solar cells

PACS

  • 88.40.hj

    Efficiency and performance of solar cells

  • 85.60.Bt

    Optoelectronic device characterization, design, and modeling

  • 81.05.Lg

    Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3474654

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
J-V characteristics under 100 mW/cm2 white light illumination of (a) OPV devices with varying active layer thicknesses before thermal annealing, and (b) a 1200 nm OPV device thermally annealed at 110 °C up to 120 min.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Spectral responses of OPV devices with varying active layer thicknesses before thermal annealing; the dotted curve represents the spectral response from a 1200 nm device under illumination through the semitransparent back contact. (b) Spectral responses of a 1200 nm OPV device thermally annealed at 110 °C up to 120 min.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Supplemental Files (EPAPS)

Tables

Table I. Performance parameters of OPV devices with varying active layer thicknesses before and after thermal annealing at 110 °C for 20 min.

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