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Applied Physics Letters / Volume 97 / Issue 5 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 053501 (2010); http://dx.doi.org/10.1063/1.3476337 (3 pages)

Transistor gating by polar molecular monolayers

O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand, and Y. Rosenwaks

School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel

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(Received 22 March 2010; accepted 7 July 2010; published online 4 August 2010)

In order to determine the role of polar monolayers in molecular-gated transistors we combine Kelvin probe force microscopy and current-voltage measurements of hybrid silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Layers having alternating net-dipole direction were self-assembled on the top dielectric layer of the transistors. Nonzero field-effect was observed only with an amine-terminated monolayer and is attributed to the protonation of the amine groups. No correlation between the field-effect and the net-dipole of the molecular layers was found; this effect is discussed and explained.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

association, atomic force microscopy, elemental semiconductors, MISFET, monolayers, organic compounds, self-assembly, silicon, silicon-on-insulator

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476337

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    O. Shaya, M. Shaked, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, Appl. Phys. Lett. 93, 043509 (2008)APPLAB000093000004043509000001.

    D. Landheer, G. Aers, W. R. McKinnon, M. J. Deen, and J. C. Ranuarez, J. Appl. Phys. 98, 044701 (2005)JAPIAU000098000004044701000001.

    Y. Paska and H. Haick, Appl. Phys. Lett. 95, 233103 (2009)APPLAB000095000023233103000001.

    Ch. Sommerhalter, Th. W. Matthes, Th. Glatzel, A. Jäeger-Waldau, and M. Ch. Lux-Steiner, Appl. Phys. Lett. 75, 286 (1999)APPLAB000075000002000286000001.


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