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Applied Physics Letters / Volume 97 / Issue 5 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 053502 (2010); http://dx.doi.org/10.1063/1.3475394 (3 pages)

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

S. Tan, S. L. Selvaraj, and T. Egawa

Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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(Received 8 April 2010; accepted 14 July 2010; published online 5 August 2010)

Low-temperature AlN grown on AlGaN/GaN heterostructure in situ by metal-organic chemical vapor deposition is used as gate insulator and passivation layer to form quasi-normally-off field-effect transistors on 4 in. silicon substrate. The AlN layer not only increases the sheet carrier density and mobility, which results in the increase of the maximum drain current and transconductance, but also decreases gate leakage and current collapse. Simulated band diagrams indicate that only a small potential difference exists between the AlN surface barrier height and the AlN/AlGaN interface. We show that low-temperature grown AlN is effective in suppressing trapping effects and in improving device performance.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, carrier density, carrier mobility, gallium compounds, III-V semiconductors, MISFET, MOCVD, passivation, semiconductor growth, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475394

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    S. L. Selvaraj, T. Ito, Y. Terada, and T. Egawa, Appl. Phys. Lett. 90, 173506 (2007)APPLAB000090000017173506000001.

    X. Z. Dang, P. M. Asbeck, E. T. Yu, G. J. Sullivan, M. Y. Chen, B. T. Mcdermott, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. 74, 3890 (1999)APPLAB000074000025003890000001.

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