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Applied Physics Letters / Volume 97 / Issue 5 / ERRATA
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Appl. Phys. Lett. 97, 059904 (2010); http://dx.doi.org/10.1063/1.3475768 (1 page)

Erratum: “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/V s” [ Appl. Phys. Lett. 94, 182102 (2009) ]

T. M. Lu1, D. C. Tsui1, C.-H. Lee2, and C. W. Liu2,3

1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
2Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan
3National Nano Device Laboratories, Hsinchu 300, Taiwan

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(Received 14 July 2010; accepted 16 July 2010; published online 2 August 2010)

Abstract unavailable.

EDITORIALLY RELATED

  1. Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106  cm2/V  s
    T. M. Lu et al.
    Appl. Phys. Lett. 94, 182102 (2009)APPLAB000094000018182102000001

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KEYWORDS and PACS

Keywords

carrier mobility, elemental semiconductors, Ge-Si alloys, semiconductor quantum wells, silicon, transmission electron microscopy, two-dimensional electron gas

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475768

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics


Figures (click on thumbnails to view enlargements)

FIG.1
A cross-sectional transmission electron micrograph of the sample used in the study: the thickness of the SiGe barrier layer is 150 nm.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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