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2 Aug 2010

Volume 97, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 051101 (2010); http://dx.doi.org/10.1063/1.3470591 (3 pages)

Pascal Böhi, Max F. Riedel, Theodor W. Hänsch, and Philipp Treutlein
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Controlling the electrical transport properties of graphene by in situ metal deposition

Yujie Ren, Shanshan Chen, Weiwei Cai, Yanwu Zhu, Chaofu Zhu, and Rodney S. Ruoff

Appl. Phys. Lett. 97, 053107 (2010); http://dx.doi.org/10.1063/1.3471396 (3 pages) | Cited 16 times

Online Publication Date: 3 August 2010

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The deposition effect of metals on graphene was studied by in situ field effect transistor (FET) measurements in high vacuum. Metals such as gold (Au), silver (Ag), and copper (Cu) were deposited onto clean graphene surfaces, followed by FET measurements. The results show that Ag and Cu cause a shift in the Fermi level in the graphene from the Dirac point into the conduction band while Au causes a shift into the valence band. The induced carrier concentration was estimated at 2–6×1012/cm2. The shifts in the Fermi level of the graphene are explained by the different work functions of these metals.
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73.63.-b Electronic transport in nanoscale materials and structures
73.22.Pr Electronic structure of graphene
73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Dj E-beam and hot filament evaporation deposition
68.55.A- Nucleation and growth

Switching capability of double-sided grating with horizontal shift

Hideo Iizuka, Nader Engheta, Hisayoshi Fujikawa, Kazuo Sato, and Yasuhiko Takeda

Appl. Phys. Lett. 97, 053108 (2010); http://dx.doi.org/10.1063/1.3476349 (3 pages) | Cited 3 times

Online Publication Date: 4 August 2010

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A TiO2 grating beam splitter on the SiO2 layer is designed using the modal analysis. Normal incident light couples to the −1st/+1st-order transmission diffraction with a 49.6% efficiency for each and with a 50° refraction angle that is larger than the critical angle for the SiO2-air interface. The SiO2 interlayer is sandwiched between the two gratings. The finite-integration-technique investigation shows its switching capability due to the quarter-period shift between the gratings, with the zeroth-order transmission smaller than 5% for the “off” state and larger than 95% for the “on” state from 553 to 654 nm wavelength regime.
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42.79.Fm Reflectors, beam splitters, and deflectors

Plasmon assisted single photon emission of CdSe/CdS nanocrystals deposited on random gold film

I. Mallek-Zouari, S. Buil, X. Quélin, B. Mahler, B. Dubertret, and J.-P. Hermier

Appl. Phys. Lett. 97, 053109 (2010); http://dx.doi.org/10.1063/1.3467264 (3 pages) | Cited 4 times

Online Publication Date: 4 August 2010

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We have investigated the modifications of the fluorescence properties of single CdSe/CdS nanocrystals deposited close to a semicontinuous gold film. We report a reduction by a factor of ten of the monoexcitonic state decay rate. Due to the structure of the plasmon resonances, the decay depends on the nanocrystal position. Through the detailed study of the collection efficiency, we show that a large fraction of the plasmons are converted in far field single photons. These results demonstrate the great interest of plasmonic devices to control the single photon emission of colloidal nanocrystals.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
79.60.-i Photoemission and photoelectron spectra

Direct determination of the crystallographic orientation of graphene edges by atomic resolution imaging

S. Neubeck, Y. M. You, Z. H. Ni, P. Blake, Z. X. Shen, A. K. Geim, and K. S. Novoselov

Appl. Phys. Lett. 97, 053110 (2010); http://dx.doi.org/10.1063/1.3467468 (3 pages) | Cited 14 times

Online Publication Date: 4 August 2010

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In this letter, we show how high-resolution scanning tunneling microscopy (STM) imaging can be used to reveal that certain edges of micromechanically exfoliated single layer graphene crystals on silicon oxide follow either zigzag or armchair orientation. Using the cleavage technique, graphene flakes are obtained that very often show terminating edges seemingly following the crystallographic directions of the underlying honeycomb lattice. Performing atomic resolution STM-imaging on such flakes, we were able to directly prove this assumption. Raman imaging carried out on the same flakes further validated our findings.
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61.48.Gh Structure of graphene
81.05.ue Graphene
78.30.Na Fullerenes and related materials

Differential reflection spectroscopy of a single quantum dot strongly coupled to a photonic crystal cavity

Erik D. Kim, Arka Majumdar, Hyochul Kim, Pierre Petroff, and Jelena Vučković

Appl. Phys. Lett. 97, 053111 (2010); http://dx.doi.org/10.1063/1.3469922 (3 pages) | Cited 1 time

Online Publication Date: 4 August 2010

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We demonstrate the use of periodically modulated Coulomb shifts in quantum dot (QD) transition energies to obtain differential reflection spectra of a photonic crystal nanocavity containing strongly coupled dots. Measured spectra isolate the change in the empty cavity optical reflectivity spectrum due to the presence of each dot. This technique permits the probing of coupled QD-cavity systems possessing cavity modes of arbitrary polarization, making it attractive for use in both cavity quantum electrodynamics studies and quantum information applications.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.Qs Photonic bandgap materials
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Low-power write-once-read-many-times memory devices

Jianpu Wang, Feng Gao, and Neil C. Greenham

Appl. Phys. Lett. 97, 053301 (2010); http://dx.doi.org/10.1063/1.3473775 (3 pages) | Cited 7 times

Online Publication Date: 2 August 2010

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We introduce low-power write-once-read-many-times memory devices fabricated from solution. These devices are based on an electron-only structure using colloidal ZnO semiconductor nanoparticles and the doped conjugated polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT:PSS). The conductive p-doped conjugated polymer is permanently dedoped by injected electrons, producing an insulating state. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power-consumption applications, such as radio-frequency identification tags.
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84.30.Sk Pulse and digital circuits
42.79.Vb Optical storage systems, optical disks
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Flame-made niobium doped zinc oxide nanoparticles in bulk heterojunction solar cells

Viruntachar Kruefu, Eric Peterson, Chanitpa Khantha, Chawarat Siriwong, Sukon Phanichphant, and David L. Carroll

Appl. Phys. Lett. 97, 053302 (2010); http://dx.doi.org/10.1063/1.3465866 (3 pages) | Cited 9 times

Online Publication Date: 2 August 2010

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We report fabrication and measurement of bulk heterojunction solar cells utilizing a poly(3-hexylthiophene) (P3HT), phenyl-C61-butyric acid methyl ester (PCBM) composite loaded with different concentrations of niobium doped zinc oxide (Nb/ZnO) nanoparticles produced by flame spray pyrolysis. Nanoparticles with different niobium concentrations were compared, along with devices without Nb/ZnO nanoparticles and with undoped ZnO nanoparticles. It was found that niobium doping leads to a slight increase in open circuit voltage and an increase in short circuit current that scales with niobium concentration. Additional comparison was made between the nanoparticles with 3% niobium by weight to unloaded devices. These also showed a similar open circuit voltage increase and an increase in current that scales with Nb/ZnO nanoparticle concentration to 30% by volume and drops off at 33% Nb/ZnO by volume. Possible mechanisms for these improvements are discussed.
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81.07.Bc Nanocrystalline materials
81.16.Be Chemical synthesis methods
81.05.Cy Elemental semiconductors
88.40.jp Multijunction solar cells
82.45.Yz Nanostructured materials in electrochemistry
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Inverted tandem organic solar cells with a MoO3/Ag/Al/Ca intermediate layer

X. W. Sun, D. W. Zhao, L. Ke, A. K. K. Kyaw, G. Q. Lo, and D. L. Kwong

Appl. Phys. Lett. 97, 053303 (2010); http://dx.doi.org/10.1063/1.3469928 (3 pages) | Cited 18 times

Online Publication Date: 2 August 2010

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An inverted tandem organic solar cell, consisting of two bulk heterojunction subcells with identical poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 active layer, and an intermediate layer made of ultrathin multiple metal layers of Ca/Al/Ag and metal oxide MoO3, is reported. This intermediate layer is of advantage in high transparency and low series resistance. Moreover, it serves as the charge recombination center effectively, and renders an exact summation of the open-circuit voltages (1.18 V) of the two subcells and a high fill factor (61.8%). The maximum power conversion efficiency obtained is 2.78% under simulated 100 mW/cm2 [air mass (AM) 1.5G] solar irradiation, comparable to those of the two subcells.
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88.40.H- Solar cells (photovoltaics)
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High performance organic transistors: Percolating arrays of nanotubes functionalized with an electron deficient olefin

Mandakini Kanungo, George G. Malliaras, and Graciela B. Blanchet

Appl. Phys. Lett. 97, 053304 (2010); http://dx.doi.org/10.1063/1.3457171 (3 pages)

Online Publication Date: 3 August 2010

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Precise control over the electronic properties of carbon nanotubes is key to their application in plastic electronics. In the present work, we have functionalized carbon nanotubes with an electron withdrawing nonfluorinated olefins via a 2−2 cycloaddition reaction. Our results suggest that the formation of cyclobutanelike four-member ring at the functionalization site is a fairly general approach, independent of specifics of the addend, to converting the grown mixture of metal and semiconductor tubes into high mobility semiconducting tubes without tedious separation requirements. Thin film transistors fabricated from such functionalized tubes exhibit mobilities of ∼ 30 cm2/V s and on/off ratios in excess of 106. This simple functionalization represents a low cost path to high performance semiconducting inks for printable electronics.
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73.22.-f Electronic structure of nanoscale materials and related systems
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Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices

Lichang Zeng, Ching W. Tang, and Shaw H. Chen

Appl. Phys. Lett. 97, 053305 (2010); http://dx.doi.org/10.1063/1.3474654 (3 pages) | Cited 13 times

Online Publication Date: 4 August 2010

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The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li+ diffusion from the LiF/Al contact.
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88.40.hj Efficiency and performance of solar cells
85.60.Bt Optoelectronic device characterization, design, and modeling
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
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Transistor gating by polar molecular monolayers

O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand, and Y. Rosenwaks

Appl. Phys. Lett. 97, 053501 (2010); http://dx.doi.org/10.1063/1.3476337 (3 pages) | Cited 4 times

Online Publication Date: 4 August 2010

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In order to determine the role of polar monolayers in molecular-gated transistors we combine Kelvin probe force microscopy and current-voltage measurements of hybrid silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Layers having alternating net-dipole direction were self-assembled on the top dielectric layer of the transistors. Nonzero field-effect was observed only with an amine-terminated monolayer and is attributed to the protonation of the amine groups. No correlation between the field-effect and the net-dipole of the molecular layers was found; this effect is discussed and explained.
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85.30.Tv Field effect devices

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

S. Tan, S. L. Selvaraj, and T. Egawa

Appl. Phys. Lett. 97, 053502 (2010); http://dx.doi.org/10.1063/1.3475394 (3 pages)

Online Publication Date: 5 August 2010

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Low-temperature AlN grown on AlGaN/GaN heterostructure in situ by metal-organic chemical vapor deposition is used as gate insulator and passivation layer to form quasi-normally-off field-effect transistors on 4 in. silicon substrate. The AlN layer not only increases the sheet carrier density and mobility, which results in the increase of the maximum drain current and transconductance, but also decreases gate leakage and current collapse. Simulated band diagrams indicate that only a small potential difference exists between the AlN surface barrier height and the AlN/AlGaN interface. We show that low-temperature grown AlN is effective in suppressing trapping effects and in improving device performance.
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85.30.Tv Field effect devices

Ferroelectric transistors with improved characteristics at high temperature

Giovanni A. Salvatore, Livio Lattanzio, Didier Bouvet, Igor Stolichnov, Nava Setter, and Adrian M. Ionescu

Appl. Phys. Lett. 97, 053503 (2010); http://dx.doi.org/10.1063/1.3467471 (3 pages) | Cited 1 time

Online Publication Date: 6 August 2010

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We report on the temperature dependence of ferroelectric metal-oxide-semiconductor (MOS) transistors and explain the observed improved characteristics based on the dielectric response of ferroelectric materials close to the Curie temperature. The hysteretic current-voltage static characteristics of a fully depleted silicon-on-insulator transistor, with 40 nm vinylidene fluoride trifluorethylene, and 10 nm SiO2 gate stack, are measured from 300 to 400 K. In contrast with conventional MOS field effect transistors (MOSFETs), the subthreshold swing and the transconductance show, respectively, a minimum and a maximum near the Curie temperature (355 K) of the ferroelectric material. A phenomenological model is proposed based on the Landau–Ginzburg theory. This work demonstrates that a MOSFET with a ferroelectric layer integrated in the gate stack could have nondegraded or even improved subthreshold swing and transconductance at high temperature even though the hysteresis window is reduced. As a consequence, we suggest that for ferroelectric transistors with appropriately designed Curie temperatures, the performance degradation of logic or analog circuits, nowadays operating near 100 °C, could be avoided.
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85.30.Tv Field effect devices
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Effect of fibril shape on adhesive properties

Daniel Soto, Ginel Hill, Aaron Parness, Noé Esparza, Mark Cutkosky, and Tom Kenny

Appl. Phys. Lett. 97, 053701 (2010); http://dx.doi.org/10.1063/1.3464553 (3 pages) | Cited 4 times

Online Publication Date: 2 August 2010

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Research into the gecko’s adhesive system revealed a unique architecture for adhesives using tiny hairs. By using a stiff material (β-keratin) to create a highly structured adhesive, the gecko’s system demonstrates properties not seen in traditional pressure-sensitive adhesives which use a soft, unstructured planar layer. In contrast to pressure sensitive adhesives, the gecko adhesive displays frictional adhesion, in which increased shear force allows it to withstand higher normal loads. Synthetic fibrillar adhesives have been fabricated but not all demonstrate this frictional adhesion property. Here we report the dual-axis force testing of single silicone rubber pillars from synthetic adhesive arrays. We find that the shape of the adhesive pillar dictates whether frictional adhesion or pressure-sensitive behavior is observed. This work suggests that both types of behavior can be achieved with structures much larger than gecko terminal structures. It also indicates that subtle differences in the shape of these pillars can significantly influence their properties.
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68.35.Np Adhesion
46.55.+d Tribology and mechanical contacts
82.35.Gh Polymers on surfaces; adhesion
89.20.Kk Engineering
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Phase changes of ultrasonic bulk waves through focusing measured using a noncontact ultrasonic method

S. Dixon, T. J. Harrison, and P. A. Petcher

Appl. Phys. Lett. 97, 054101 (2010); http://dx.doi.org/10.1063/1.3475926 (2 pages)

Online Publication Date: 2 August 2010

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Focusing an ultrasonic surface or bulk wave to a point can maximize the amount of ultrasonic energy at a point and increase the sensitivity of a measurement. Using a noncontact, ultrasonic method we focus an ultrasonic bulk wave pulse in a sample, using the surface profile of the sample itself to focus the wave. Experiments and modeling confirm that the wave pulse undergoes a phase shift on passing through the focal point.
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68.35.Iv Acoustical properties
62.65.+k Acoustical properties of solids

Potential micrometeoroid and orbital debris protection system using a gradient magnetic field and magnetic flux compression

A. Giffin, M. N. Shneider, and R. B. Miles

Appl. Phys. Lett. 97, 054102 (2010); http://dx.doi.org/10.1063/1.3474607 (3 pages)

Online Publication Date: 2 August 2010

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A system for using a magnetic field in conjunction with conventional shielding configurations to protect against micrometeoroid and orbital debris is presented. Analytical, numerical, and experimental studies of a conductor moving through a gradient magnetic field have been performed. The results show that in the high magnetic Reynolds number regime a conducting object will experience large forces that tend to deform it while moving through the gradient field. Additionally a configuration using magnetic flux compression is introduced to act as a magnetic shock absorber. Separately or together, this technology may augment or replace current protection designs for space systems.
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96.30.Ys Asteroids, meteoroids
95.75.-z Observation and data reduction techniques; computer modeling and simulation

Three-dimensional acoustic lenses with axial symmetry

Lorenzo Sanchis, Andrés Yánez, Pedro L. Galindo, Joaquín Pizarro, and Juan Martínez Pastor

Appl. Phys. Lett. 97, 054103 (2010); http://dx.doi.org/10.1063/1.3474616 (3 pages) | Cited 2 times

Online Publication Date: 2 August 2010

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In this paper a technique to design three dimensional (3D) devices to focus acoustic waves composed of scattering elements is proposed. The devices are designed and optimized in two dimensions (2D) with the help of a genetic algorithm and the 2D multiple scattering formalism. The transition from 2D to 3D is made by applying a rotation operation to the optimized design, thus passing from a set of 2D circular scatters to their equivalent 3D concentric rings of circular section and finite dimensions, considerably improving its performance. The method has been applied to the design and theoretical characterization of a single-focus acoustic lens and a tunable lens capable of changing the focal length with frequency. A prototype lens was fabricated using aluminum rings clamped to a rigid frame, obtaining a good agreement between theory and experiment.
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43.20.-f General linear acoustics
43.38.-p Transduction; acoustical devices for the generation and reproduction of sound
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Comment on “Water-driven programmable polyurethane shape memory polymer: Demonstration and mechanism” [ Appl. Phys. Lett. 86, 114105 (2005) ]

Haibao Lu, Yanju Liu, Jinsong Leng, and Shanyi Du

Appl. Phys. Lett. 97, 056101 (2010); http://dx.doi.org/10.1063/1.3421393 (2 pages) | Cited 5 times

Online Publication Date: 2 August 2010

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Abstract Unavailable
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62.10.+s Mechanical properties of liquids
65.20.Jk Studies of thermodynamic properties of specific liquids
65.20.De General theory of thermodynamic properties of liquids, including computer simulation
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Response to “Comment on ‘Water-driven programmable polyurethane shape memory polymer: Demonstration and mechanism [ Appl. Phys. Lett. 97, 056101 (2010) ]’”

W. M. Huang, B. Yang, C. Li, Y. S. Chan, and L. An

Appl. Phys. Lett. 97, 056102 (2010); http://dx.doi.org/10.1063/1.3421394 (1 page) | Cited 3 times

Online Publication Date: 2 August 2010

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Abstract Unavailable
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81.40.Lm Deformation, plasticity, and creep
64.70.km Polymers
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.dq Other elastic constants
62.20.fg Shape-memory effect; yield stress; superelasticity
61.41.+e Polymers, elastomers, and plastics
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Erratum: “Direct chemical synthesis of high coercivity SmCo nanoblades” [ Appl. Phys. Lett. 93, 032505 (2008) ]

C. N. Chinnasamy, J. Y. Huang, L. H. Lewis, C. Vittoria, and V. G. Harris

Appl. Phys. Lett. 97, 059901 (2010); http://dx.doi.org/10.1063/1.3456727 (2 pages) | Cited 4 times

Online Publication Date: 2 August 2010

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Abstract Unavailable
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99.10.Cd Errata
75.75.Cd Fabrication of magnetic nanostructures
75.50.Cc Other ferromagnetic metals and alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.16.-c Methods of micro- and nanofabrication and processing
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Erratum: “High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully etched photonic crystal structure” [ Appl. Phys. Lett. 96, 051126 (2010) ]

Liu Liu (刘柳), Minhao Pu (蒲敏皓), Kresten Yvind, and Jørn M. Hvam

Appl. Phys. Lett. 97, 059902 (2010); http://dx.doi.org/10.1063/1.3475767 (1 page)

Online Publication Date: 2 August 2010

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Abstract Unavailable
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42.79.Gn Optical waveguides and couplers
99.10.Cd Errata
42.70.Qs Photonic bandgap materials
42.79.Dj Gratings
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Erratum: “Epilayer control of photodeposited materials during UV photocatalysis” [ Appl. Phys. Lett. 94, 232901 (2009) ]

R. Takahashi, M. Katayama, Ø. Dahl, J. K. Grepstad, Y. Matsumoto, and T. Tybell

Appl. Phys. Lett. 97, 059903 (2010); http://dx.doi.org/10.1063/1.3449136 (1 page) | Cited 1 time

Online Publication Date: 2 August 2010

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Abstract Unavailable
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99.10.Cd Errata
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.Hp Processes caused by visible and UV light
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Erratum: “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/V s” [ Appl. Phys. Lett. 94, 182102 (2009) ]

T. M. Lu, D. C. Tsui, C.-H. Lee, and C. W. Liu

Appl. Phys. Lett. 97, 059904 (2010); http://dx.doi.org/10.1063/1.3475768 (1 page) | Cited 2 times

Online Publication Date: 2 August 2010

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Abstract Unavailable
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99.10.Cd Errata
73.21.Fg Quantum wells
73.63.Hs Quantum wells
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