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2 Aug 2010

Volume 97, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 97, 051101 (2010); http://dx.doi.org/10.1063/1.3470591 (3 pages)

Pascal Böhi, Max F. Riedel, Theodor W. Hänsch, and Philipp Treutlein
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Transistor gating by polar molecular monolayers

O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand, and Y. Rosenwaks

Appl. Phys. Lett. 97, 053501 (2010); http://dx.doi.org/10.1063/1.3476337 (3 pages) | Cited 4 times

Online Publication Date: 4 August 2010

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In order to determine the role of polar monolayers in molecular-gated transistors we combine Kelvin probe force microscopy and current-voltage measurements of hybrid silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Layers having alternating net-dipole direction were self-assembled on the top dielectric layer of the transistors. Nonzero field-effect was observed only with an amine-terminated monolayer and is attributed to the protonation of the amine groups. No correlation between the field-effect and the net-dipole of the molecular layers was found; this effect is discussed and explained.
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85.30.Tv Field effect devices

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

S. Tan, S. L. Selvaraj, and T. Egawa

Appl. Phys. Lett. 97, 053502 (2010); http://dx.doi.org/10.1063/1.3475394 (3 pages)

Online Publication Date: 5 August 2010

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Low-temperature AlN grown on AlGaN/GaN heterostructure in situ by metal-organic chemical vapor deposition is used as gate insulator and passivation layer to form quasi-normally-off field-effect transistors on 4 in. silicon substrate. The AlN layer not only increases the sheet carrier density and mobility, which results in the increase of the maximum drain current and transconductance, but also decreases gate leakage and current collapse. Simulated band diagrams indicate that only a small potential difference exists between the AlN surface barrier height and the AlN/AlGaN interface. We show that low-temperature grown AlN is effective in suppressing trapping effects and in improving device performance.
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85.30.Tv Field effect devices

Ferroelectric transistors with improved characteristics at high temperature

Giovanni A. Salvatore, Livio Lattanzio, Didier Bouvet, Igor Stolichnov, Nava Setter, and Adrian M. Ionescu

Appl. Phys. Lett. 97, 053503 (2010); http://dx.doi.org/10.1063/1.3467471 (3 pages) | Cited 1 time

Online Publication Date: 6 August 2010

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We report on the temperature dependence of ferroelectric metal-oxide-semiconductor (MOS) transistors and explain the observed improved characteristics based on the dielectric response of ferroelectric materials close to the Curie temperature. The hysteretic current-voltage static characteristics of a fully depleted silicon-on-insulator transistor, with 40 nm vinylidene fluoride trifluorethylene, and 10 nm SiO2 gate stack, are measured from 300 to 400 K. In contrast with conventional MOS field effect transistors (MOSFETs), the subthreshold swing and the transconductance show, respectively, a minimum and a maximum near the Curie temperature (355 K) of the ferroelectric material. A phenomenological model is proposed based on the Landau–Ginzburg theory. This work demonstrates that a MOSFET with a ferroelectric layer integrated in the gate stack could have nondegraded or even improved subthreshold swing and transconductance at high temperature even though the hysteresis window is reduced. As a consequence, we suggest that for ferroelectric transistors with appropriately designed Curie temperatures, the performance degradation of logic or analog circuits, nowadays operating near 100 °C, could be avoided.
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85.30.Tv Field effect devices
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