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2 Aug 2010

Volume 97, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 97, 051101 (2010); http://dx.doi.org/10.1063/1.3470591 (3 pages)

Pascal Böhi, Max F. Riedel, Theodor W. Hänsch, and Philipp Treutlein
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Strontium-induced ferroelectriclike relaxor behavior in Bi-based pyrochlores

Huiling Du and Xiang Shi

Appl. Phys. Lett. 97, 052901 (2010); http://dx.doi.org/10.1063/1.3474610 (3 pages)

Online Publication Date: 2 August 2010

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The dielectric properties of stoichiometric dense ceramics (Bi1.5Zn0.5−xSrx)(Ti1.5Nb0.5)O7 (BZSTN, x = 0–0.5) have been investigated as a function of temperature and frequency. A significant relaxation behavior at about 250 °C is induced when moderate Sr2+ is substituted with Zn2+ in Bi1.5Zn0.5Ti1.5Nb0.5O7 (BZTN) ceramics. The observation of hysteretic behavior in the P versus E curves shows the existence of a polar state. The ferroelectriclike relaxor behavior arises mainly from the dynamic response of the micropolar clusters, which exist in the off-center ions doped paraelectric. The ultrahigh permittivity of 245 at ambient temperature could be very promising for integrated capacitors and microwave resonators.
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77.80.Jk Relaxor ferroelectrics
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.55.F- High-permittivity capacitive films

Quantitative determination of anisotropic magnetoelectric coupling in BiFeO3–CoFe2O4 nanostructures

Yoon Seok Oh, S. Crane, H. Zheng, Y. H. Chu, R. Ramesh, and Kee Hoon Kim

Appl. Phys. Lett. 97, 052902 (2010); http://dx.doi.org/10.1063/1.3475420 (3 pages) | Cited 7 times

Online Publication Date: 4 August 2010

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The transverse and longitudinal magnetoelectric susceptibilities (MES) were quantitatively determined for (001) heteroepitaxial BiFeO3–CoFe2O4 nanostructures. Both of these MES values were sharply enhanced at magnetic fields below 6 kOe and revealed asymmetric line shapes with respect to the dc magnetic field, demonstrating the strain-induced magnetoelectric effect. The maximum transverse MES, which reached as high as ∼ 60 mV/cm Oe, was about five times larger than the longitudinal MES. This observation signifies that transverse magnetostriction of the CoFe2O4 nanopillars is enhanced more than the bulk value due to preferred magnetic domain alignment along the [001] direction coming from compressive, heteroepitaxial strain.
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75.85.+t Magnetoelectric effects, multiferroics
75.75.-c Magnetic properties of nanostructures
75.75.Fk Domain structures in nanoparticles
75.30.Gw Magnetic anisotropy

Effect of polarization-memory in SrTiO3/La0.9Sr0.1MnO3 multilayer on Si substrate

Yingtang Zhang, Yiming Zhang, and Shengtao Li

Appl. Phys. Lett. 97, 052903 (2010); http://dx.doi.org/10.1063/1.3476358 (3 pages) | Cited 1 time

Online Publication Date: 5 August 2010

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SrTiO3/La0.9Sr0.1MnO3 (STO/LSMO) multilayer was fabricated on n-Si (100) substrate by using a computer-controlled laser molecular-beam epitaxy technique. A rectifying behavior was observed in the multilayer. Meanwhile, the capancitance-voltage (C-V) characteristics were investigated, which reveals a hysteresis memory effect in forward and backward bias regions. A detail study suggests that the hysteresis behaviors originate from the cooperation and competition between the interfacial polarization and trapping/detrapping mechanisms. Our results are expected to meet the high desire of the optimization and device design of random access memory.
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85.30.-z Semiconductor devices
68.55.at Other materials

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

A. O’Mahony, S. Monaghan, G. Provenzano, I. M. Povey, M. G. Nolan, É. O’Connor, K. Cherkaoui, S. B. Newcomb, F. Crupi, P. K. Hurley, and M. E. Pemble

Appl. Phys. Lett. 97, 052904 (2010); http://dx.doi.org/10.1063/1.3473773 (3 pages) | Cited 17 times

Online Publication Date: 6 August 2010

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High mobility III-V substrates with high-k oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of Al2O3. A thin ( ∼ 1 nm) Al2O3 interface control layer is deposited on In0.53Ga0.47As prior to HfO2 growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by ∼ 50% while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the In0.53Ga0.47As native oxides.
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84.32.Tt Capacitors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
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