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2 Aug 2010

Volume 97, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 97, 051101 (2010); http://dx.doi.org/10.1063/1.3470591 (3 pages)

Pascal Böhi, Max F. Riedel, Theodor W. Hänsch, and Philipp Treutlein
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Modulating the electronic structures and optical absorption spectra of BeO nanotubes by uniaxial strain

Jiangang He, Kechen Wu, Rongjian Sa, Qiaohong Li, and Yongqin Wei

Appl. Phys. Lett. 97, 051901 (2010); http://dx.doi.org/10.1063/1.3473726 (3 pages) | Cited 2 times

Online Publication Date: 3 August 2010

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The electronic structures, optical absorption spectra, and the modulation of uniaxial strain along tube axis to electronic structures and optical absorption spectra of BeO nanotubes have been studied using the density functional theory. The results show that the absorption spectrum of BeO nanotubes is anisotropic with respect to light polarization and is closely related to the chirality and diameter of tube. The uniaxial strain can effectively modulate the electronic structures and absorption spectra of BeO nanotubes, indicating the armchair BeO nanotubes can be used as the anisotropic device and sensor of photoelectron.
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73.22.-f Electronic structure of nanoscale materials and related systems
71.20.Ps Other inorganic compounds
78.67.Ch Nanotubes

Direct evidence of LO phonon-plasmon coupled modes in n-GaN

Devki N. Talwar

Appl. Phys. Lett. 97, 051902 (2010); http://dx.doi.org/10.1063/1.3473826 (3 pages) | Cited 3 times

Online Publication Date: 3 August 2010

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We report theoretical results of the far-infrared transmission in oblique incidence for undoped and doped GaN epilayers. For c-GaN, our results in p-polarization find transmission minima at LO and TO frequencies while in s-polarization only one minima corresponding to TO mode is revealed. For c-GaN/GaAs/AlN (buffer) layer we noticed minima in s-polarization corresponding to TO modes of c-GaN and c-AlN while in p-polarization the features related to TO modes as well as minima linked to LO modes are found. The shift in L+ modes with increasing carrier concentration (N) provided direct evidence of estimating N in doped GaN.
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73.61.Ey III-V semiconductors
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
68.55.ag Semiconductors
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping

Xuegong Yu, Peng Wang, Peng Chen, Xiaoqiang Li, and Deren Yang

Appl. Phys. Lett. 97, 051903 (2010); http://dx.doi.org/10.1063/1.3475486 (3 pages) | Cited 5 times

Online Publication Date: 3 August 2010

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We have demonstrated the impact of germanium (Ge) doping on the boron–oxygen (B–O) defects in p-type Czochralski (CZ) silicon. It is found that germanium can effectively suppress the formation of B–O defects, whereby the reduction percentage of B–O defect concentration increases with the Ge content. The efficiency of Ge-doped CZ silicon solar cell and the power output of corresponding module both exhibit a significantly lower loss. Based on the fact of a relatively lower concentration of O2i existing in GCZ silicon, it is believed that the suppression of B–O defects is a result of Ge improving the diffusion barrier of Oi.
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61.72.U- Doping and impurity implantation
88.40.H- Solar cells (photovoltaics)
66.30.-h Diffusion in solids

Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Yu. Evstratov, and S. Yu. Karpov

Appl. Phys. Lett. 97, 051904 (2010); http://dx.doi.org/10.1063/1.3476344 (3 pages) | Cited 8 times

Online Publication Date: 5 August 2010

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Indium incorporation into strained InGaN coherently grown on a GaN substrate with arbitrary polarity is simulated using a simplified epitaxy model. The InGaN composition is predicted as a function of C-axis inclination angle. Effect of strain originated from the lattice mismatch on optical transitions in the bulk InGaN and quantum wells is examined with account of both complex valence band structure and polarization charges induced at the InGaN/GaN interfaces. A higher indium incorporation on nonpolar and semipolar planes, as compared to the ordinary C-plane, is found to not necessarily result in a longer emission wavelength.
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81.05.Ea III-V semiconductors
81.07.St Quantum wells
78.67.De Quantum wells
73.21.Fg Quantum wells
68.65.Fg Quantum wells
77.22.Ej Polarization and depolarization

Determination of the chiralities of isolated carbon nanotubes during superplastic elongation process

Kaori Hirahara, Keita Inose, and Yoshikazu Nakayama

Appl. Phys. Lett. 97, 051905 (2010); http://dx.doi.org/10.1063/1.3473823 (3 pages) | Cited 6 times

Online Publication Date: 5 August 2010

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The structural changes in an isolated carbon nanotube during superplastic elongation are studied using a in situ transmission electron microscopy equipped with a nanomanipulation system. Nanobeam electron diffraction reveals the chiral indices of the nanotube decrease by (1, 1) when tensile stress and electroresistive heating are simultaneously applied. The change in the chiral indices corresponds to the migration of just two pairs of defects in the nanotube walls. The experiment allows the dynamics of plastic deformation to be understood at the atomistic level, which will be beneficial for constructing advanced devices with utilization of nanotubes.
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61.46.Fg Nanotubes
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Gh Other heat and thermomechanical treatments
62.20.fq Plasticity and superplasticity
62.20.D- Elasticity
81.40.Lm Deformation, plasticity, and creep

Switchable metamaterial reflector/absorber for different polarized electromagnetic waves

Bo Zhu, Yijun Feng, Junming Zhao, Ci Huang, and Tian Jiang

Appl. Phys. Lett. 97, 051906 (2010); http://dx.doi.org/10.1063/1.3477960 (3 pages) | Cited 19 times

Online Publication Date: 5 August 2010

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We demonstrate a controllable electromagnetic wave reflector/absorber for different polarizations with metamaterial involving electromagnetic resonant structures coupled with diodes. Through biasing at different voltages to turn ON and OFF the diodes, we are able to switch the structure between nearly total reflection and total absorption of a particularly polarized incident wave. By arranging orthogonally orientated resonant cells, the metamaterial can react to different polarized waves by selectively biasing the corresponding diodes. Both numerical simulations and microwave measurements have verified the performance.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.25.Ja Polarization
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials

Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

J. J. Wierer, Jr., A. A. Allerman, and Q. Li

Appl. Phys. Lett. 97, 051907 (2010); http://dx.doi.org/10.1063/1.3478002 (3 pages) | Cited 1 time

Online Publication Date: 5 August 2010

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Impurity-induced layer disordering is demonstrated in Al0.1Ga0.9N/AlN superlattices grown by metal-organic vapor phase epitaxy. During growth at temperatures as low as 885 °C and under post growth annealing at 1000 °C in N2 the heterointerfaces of Si-doped (Si concentration >8×1019 cm−3) superlattices exhibit layer disordering (intermixing) while the unintentionally doped superlattices remain stable. Shifts in the intersubband energy transitions and scanning transmission electron microscope images showing changes in the layer abruptness are used to verify layer disordering due to Si diffusion in Al0.1Ga0.9N/AlN superlattices.
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68.65.Cd Superlattices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.Cc Kinetics of defect formation and annealing
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