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Appl. Phys. Lett. 97, 061905 (2010); http://dx.doi.org/10.1063/1.3473777 (3 pages)

Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots

Je-Hyung Kim1, Bong-Joon Kwon1, Yong-Hoon Cho1, Thomas Huault2, Mathieu Leroux2, and Julien Brault2

1Department of Physics, Graduate School of Nanoscience & Technology (WCU), and KI for the NanoCentury, KAIST, Daejeon 305-701, Republic of Korea
2Centre de Recherche sur l’Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Gregory, 06560 Valbonne, France

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(Received 1 May 2010; accepted 6 July 2010; published online 10 August 2010)

We have investigated the optical properties of multi-stacked GaN/AlGaN self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs that emit visible light have a broad spectral range without incorporation of indium alloy because of the quantum-confined Stark effect. We found differences in the structural and optical properties between the layers of multi-stacked QDs. The carriers are more effectively transferred from the AlGaN barrier to the low energy side of the GaN QD emission than to the high energy side. We also observed long-lived carrier recombination dynamics for the visible range emission from QDs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 78.67.Hc

    Quantum dots

  • 81.16.Dn

    Self-assembly

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 73.63.Kv

    Quantum dots

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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    References

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