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Applied Physics Letters / Volume 97 / Issue 6 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 063305 (2010); http://dx.doi.org/10.1063/1.3478840 (3 pages)

Electrical characterization of organic resistive memory with interfacial oxide layers formed by O2 plasma treatment

Byungjin Cho, Sunghoon Song, Yongsung Ji, and Takhee Lee

Department of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea

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(Received 6 June 2010; accepted 23 July 2010; published online 13 August 2010)

We studied organic resistive memory devices with interfacial oxide layers, the thickness of which depended on O2 plasma treatment time. The different interfacial oxide thicknesses sequentially changed the ON and OFF states of the final memory devices. We found that the memory devices that had undergone additional plasma treatment showed higher ON/OFF ratios than devices without the treatment, which was due to the relatively large OFF resistance values. However, a long oxidation process widened the threshold voltage distribution and degraded the switching reproducibility. This indicates that the oxidation process should be carefully optimized to provide practical high-performance organic memory.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

interface structure, organic semiconductors, oxidation, plasma materials processing, semiconductor storage, switching

PACS

  • 81.05.Fb

    Organic semiconductors

  • 73.61.Ph

    Polymers; organic compounds

  • 68.35.Ct

    Interface structure and roughness

  • 52.77.Fv

    High-pressure, high-current plasmas (plasma spray, arc welding, etc.)

  • 81.65.Mq

    Oxidation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3478840

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) A schematic of the Al/PI:PCBM/Al organic resistive memory with an 8×8 array of cells. (b) The thickness of Al oxide as a function of the O2 plasma treatment time: 0, 5, 10, and 20 min. The insets show TEM images of each memory device. The yellow and red dotted lines indicate the native Al oxide formed during the deposition of the top electrodes and the interfacial Al oxide with varying thicknesses on the bottom electrodes created by the plasma treatment, respectively. (c) The XPS depth profile of Alm 2p and O 1s in the Al samples that were treated for varying times with an O2 plasma. (d) A comparison of the XPS spectra of the Alox and Alm peaks after 7 min of sputtering for the four types of Al samples.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) I-V characteristics of organic memory devices treated with an O2 plasma for different lengths of time. (b) The ON and OFF resistances (left y-axis) and the ON/OFF ratios (right y-axis) as a function of the O2 plasma treatment time.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) The threshold voltage distributions of organic memory devices treated with an O2 plasma for different lengths of time. (b) The cumulative probability data of each ON and OFF resistance for the organic memory devices treated with an O2 plasma for different lengths of time.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
(a) The endurance cycles of the four types of organic memory devices. (b) The retention times of the four types of organic memory devices.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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