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Applied Physics Letters / Volume 97 / Issue 7 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 97, 072505 (2010); http://dx.doi.org/10.1063/1.3481066 (3 pages)

Electron microscopy of GaAs/MnAs core/shell nanowires

N. S. Dellas1, J. Liang2, B. J. Cooley2, N. Samarth2, and S. E. Mohney1

1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

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(Received 30 March 2010; accepted 23 July 2010; published online 18 August 2010)

GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [20math1] MnAs∥[111]GaAs and (01math0) MnAs∥GaAs (math10). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001]GaAs and (math2math0) MnAs∥(math2math0)GaAs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

crystal structure, epitaxial growth, gallium arsenide, III-V semiconductors, manganese compounds, molecular beam epitaxial growth, nanowires, semiconductor heterojunctions, semiconductor quantum wires, transmission electron microscopy

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481066

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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