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Appl. Phys. Lett. 97, 073108 (2010); http://dx.doi.org/10.1063/1.3481382 (3 pages)

Large thermoelectric figure of merit for three-dimensional topological Anderson insulators via line dislocation engineering

O. A. Tretiakov1, Ar. Abanov1, Shuichi Murakami2,3, and Jairo Sinova1

1Department of Physics, Texas A&M University, College Station, Texas 77843, USA
2Department of Physics, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8551, Japan
3PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan

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(Received 23 July 2010; accepted 30 July 2010; published online 18 August 2010)

We study the thermoelectric properties of three-dimensional topological Anderson insulators with line dislocations. We show that at high densities of dislocations the thermoelectric figure of merit ZT can be dominated by one-dimensional topologically protected conducting states channeled through the lattice screw dislocations in the topological insulator materials with a nonzero time-reversal-invariant momentum such as Bi0.9Sb0.1. When the chemical potential does not exceed much the mobility edge the ZT at room temperatures can reach large values, much higher than unity for reasonable parameters, hence making this system a strong candidate for applications in heat management of nanodevices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 72.20.Pa

    Thermoelectric and thermomagnetic effects

  • 61.72.Hh

    Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    R. Takahashi and S. Murakami, Phys. Rev. B 81, 161302 (2010).

    X. -L. Qi and S. -C. Zhang, Phys. Today 63(1), 33 (2010)PHTOAD000063000001000033000001.

    L. Fu, C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 98, 106803 (2007).

    U. Sivan and Y. Imry, Phys. Rev. B 33, 551 (1986).


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