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Appl. Phys. Lett. 97, 073302 (2010); http://dx.doi.org/10.1063/1.3481407 (3 pages)

Organic heterojunction photodiodes exhibiting low voltage, imaging-speed photocurrent gain

William T. Hammond and Jiangeng Xue

Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

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(Received 30 March 2010; accepted 2 August 2010; published online 18 August 2010)

We report the demonstration of fast and strong photocurrent gain in organic photodiodes with tailored charge blocking layers. The hole blocking layer between the anode and the photoactive layer leads to accumulation of photogenerated holes at its interface with the active layer, which causes a strong secondary electron injection from the anode and as such a high photocurrent gain. Using a bulk heterojunction of C60 and copper phthalocyanine as the active layer, we have achieved photocurrent gains up to 500 across the visible spectrum and bandwidths on the order of 1 kHz, well above the imaging-compatible bandwidth (>60 Hz).

© 2010 American Institute of Physics

KEYWORDS and PACS

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

  1. S. R. Forrest, Nature (London) 428, 911 (2004). [MEDLINE]
  2. M. Ramuz, L. Bürgi, C. Winnewisser, and P. Seitz, Org. Electron. 9, 369 (2008).
  3. X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu, C. -L. Shieh, B. Nilsson, and A. J. Heeger, Science 325, 1665 (2009). [MEDLINE]
  4. I. H. Campbell and B. K. Crone, Appl. Phys. Lett. 95, 263302 (2009)APPLAB000095000026263302000001.
  5. J. Gao and F. A. Hegmann, Appl. Phys. Lett. 93, 223306 (2008)APPLAB000093000022223306000001.
  6. J. Reynaert, V. I. Arkhipov, P. Heremans, and J. Poortmans, Adv. Funct. Mater. 16, 784 (2006).
  7. H. -Y. Chen, L. K. F. G. Yang, H. G. Monbouquette, and Y. Yang, Nat. Nanotechnol. 3, 543 (2008). [MEDLINE]
  8. M. Hiramoto, K. Nakayama, I. Sato, H. Kumaoka, and M. Yokoyama, Thin Solid Films 331, 71 (1998). [ISI]
  9. G. Matsunobu, Y. Oishi, M. Yokoyama, and M. Hiramoto, Appl. Phys. Lett. 81, 1321 (2002)APPLAB000081000007001321000001. [ISI]
  10. Y. Zheng, S. -H. Eom, N. Chopra, J. Lee, F. So, and J. Xue, Appl. Phys. Lett. 92, 223301 (2008)APPLAB000092000022223301000001.
  11. S. -H. Eom, Y. Zheng, E. Wrzesniewski, J. Lee, N. Chopra, F. So, and J. Xue, Org. Electron. 10, 686 (2009).
  12. J. Xue and S. R. Forrest, J. Appl. Phys. 95, 1859 (2004)JAPIAU000095000004001859000001. [ISI]
  13. J. Xue and S. R. Forrest, J. Appl. Phys. 95, 1869 (2004)JAPIAU000095000004001869000001. [ISI]
  14. P. Peumans, A. Yakimov, and S. R. Forrest, J. Appl. Phys. 93, 3693 (2003)JAPIAU000093000007003693000001.
  15. S. Uchida, J. Xue, B. P. Rand, and S. R. Forrest, Appl. Phys. Lett. 84, 4218 (2004)APPLAB000084000021004218000001.
  16. S. R. Forrest, Chem. Rev. (Washington, D.C.) 97, 1793 (1997). [MEDLINE]
  17. B. P. Rand, D. P. Burk, and S. R. Forrest, Phys. Rev. B 75, 115327 (2007).
  18. A. Kahn, N. Koch, and W. Gao, J. Polym. Sci., Part B: Polym. Phys. 41, 2529 (2003).
  19. K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, New York, 1981).
  20. B. P. Rand, J. Xue, S. Uchida, and S. R. Forrest, J. Appl. Phys. 98, 124902 (2005)JAPIAU000098000012124902000001.


Figures (click on thumbnails to view enlargements)

FIG.1
(a) Schematic energy level diagram of device under open circuit showing alignment of transport energy levels. The energies for the Fermi levels of the electrodes (ITO, Al) and the highest occupied (lower numbers) and lowest unoccupied (upper numbers) molecular orbitals of the organic materials are all referenced from the vacuum level in electronvolt. (b) Schematic energy level diagram of the illuminated device under reverse bias.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Current density-voltage (J-V) characteristics in the dark for a CuPc:C60 organic heterojunction photodiode with a dual NTCDA/C60 blocking layer (open circles) and for a control device with no HBL but an otherwise identical structure (filled squares); (b) light absorption efficiency (ηA, solid line) and external quantum efficiency (ηEQE, symbols) as a function of the wavelength (λ) at several applied voltages for the device with the HBL; and (c) ηA (solid line) and ηEQE (symbols) for the control device without the HBL.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Photocurrent response of the organic photodiode with the HBL at an applied bias of V = −3 V as a function of the frequency of the modulated optical excitation, normalized to the response measured at 25 Hz.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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