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16 Aug 2010

Volume 97, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 97, 073101 (2010); http://dx.doi.org/10.1063/1.3478515 (3 pages)

Hon-Way Lin (林弘偉), Yu-Jung Lu (呂宥蓉), Hung-Ying Chen (陳虹穎), Hong-Mao Lee (李弘貿), and Shangjr Gwo (果尚志)
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Numerical simulation of impact ionization in Ge/AlxGa1−xAs avalanche photodiode

C. K. Chia

Appl. Phys. Lett. 97, 073501 (2010); http://dx.doi.org/10.1063/1.3480407 (3 pages) | Cited 2 times

Online Publication Date: 16 August 2010

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Impact ionization in Ge/AlxGa1−xAs p-i-n heterostructures has been studied using the Monte Carlo technique. The thin (<300 nm) Ge/AlxGa1−xAs single heterojunction structure was found to exhibit large hole (β) to electron (α) ionization coefficient ratio, owing to a higher β in the Ge layer and a lower α in the AlxGa1−xAs layer, together with the dead space effects. The Ge/AlxGa1−xAs avalanche photodiodes are attractive for applications where a wide wavelength detection range is required for compatibility with multiple sources such as in the emerging active optical cable and optical interconnect applications, as well as in the established optical fiber telecommunication systems.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Microcrystalline silicon thin-film transistors operating at very high frequencies

Marko Marinkovic, Elias Hashem, Kah-Yoong Chan, Aad Gordijn, Helmut Stiebig, and Dietmar Knipp

Appl. Phys. Lett. 97, 073502 (2010); http://dx.doi.org/10.1063/1.3481391 (3 pages) | Cited 2 times

Online Publication Date: 18 August 2010

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The switching behavior of hydrogenated microcrystalline silicon thin-film transistors (TFTs) was examined and switching frequencies exceeding 20 MHz were measured for short channel devices. The microcrystalline silicon TFTs were prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with plastic substrates. The realized microcrystalline silicon transistors exhibit high electron charge carrier mobilities of 130 cm2/V s. The switching frequency is limited by the contact resistances and overlap capacitances between the gate and the drain/source electrodes. Switching frequencies larger than 20 MHz were measured for transistors with a channel length of 5 μm. The high switching frequencies facilitate the realization of radio-frequency identification tags operating at 13.56 MHz.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Cg Contact resistance, contact potential

Increase in internal quantum efficiency in small molecular oligothiophene: C60 mixed heterojunction solar cells by substrate heating

D. Wynands, M. Levichkova, K. Leo, C. Uhrich, G. Schwartz, D. Hildebrandt, M. Pfeiffer, and M. Riede

Appl. Phys. Lett. 97, 073503 (2010); http://dx.doi.org/10.1063/1.3475766 (3 pages) | Cited 25 times

Online Publication Date: 19 August 2010

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We present small molecule solar cells with α,ω-bis-(dicyanovinylene)-sexithiophene:C60 mixed heterojunctions, reaching power conversion efficiencies of 4.9±0.2%. We use substrate heating during deposition of the mixed layer to achieve an optimized morphology and show that this significantly improves the internal quantum efficiencies (IQEs) to values approaching 70%. By optical modeling, we evaluate the amount of loss due to absorption in inactive layers and show that IQE of the active layer itself is about 80%.
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88.40.H- Solar cells (photovoltaics)

Formation of charge-selective Mg–Ag electrodes to CuPc:C60 blend layers

M. Rusu, S. Wiesner, I. Lauermann, Ch.-H. Fischer, K. Fostiropoulos, J. N. Audinot, Y. Fleming, and M. Ch. Lux-Steiner

Appl. Phys. Lett. 97, 073504 (2010); http://dx.doi.org/10.1063/1.3481395 (3 pages) | Cited 4 times

Online Publication Date: 19 August 2010

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The formation of buffer-free charge carrier selective Mg–Ag cathodes for donor-copper phthalocyanine (CuPc):acceptor-C60 bulk heterojunction organic solar cells is investigated. An optimum charge carrier selectivity is achieved with Mg:Ag/Ag cathode structures, where the Mg:Ag alloy layer has a composition close to that of Ag3Mg. In addition, Mg diffusion into CuPc:C60 layer is observed. As a result, an interaction between Mg and Cu2+ with a concurrent change in oxidation state of both metals takes place. However, no formation of magnesium phthalocyanine is observed.
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88.40.jr Organic photovoltaics

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Doyoung Jang, Jae Woo Lee, Kiichi Tachi, Laurent Montes, Thomas Ernst, Gyu Tae Kim, and Gerard Ghibaudo

Appl. Phys. Lett. 97, 073505 (2010); http://dx.doi.org/10.1063/1.3480424 (3 pages) | Cited 7 times

Online Publication Date: 19 August 2010

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Low-frequency noise has been studied in compressively strained Si0.8Ge0.2 core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, Nt, lies in the range of 2.9×1018–4.3×1019 cm−3 eV−1, which is similar to standard high-k planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.
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85.30.Tv Field effect devices

Identification of pre-breakdown mechanism of silicon solar cells at low reverse voltages

Dominik Lausch, Kai Petter, Ronny Bakowskie, Christian Czekalla, Jörg Lenzner, Holger von Wenckstern, and Marius Grundmann

Appl. Phys. Lett. 97, 073506 (2010); http://dx.doi.org/10.1063/1.3480415 (3 pages) | Cited 8 times

Online Publication Date: 20 August 2010

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The local breakdown of commercial silicon solar cells occurring at reverse voltages of only 3–4 V has been investigated by means of current-voltage measurements, dark lock-in thermography, and reverse-biased electroluminescence (ReBEL) with a spatial resolution on the micrometer-scale. It is shown that the origin of the local breakdown (so-called type I) can be traced back to a contamination of the wafer surface with Al particles prior to the phosphorous diffusion step. A model is presented explaining that the spectral maximum of ReBEL is within the visible range.
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88.40.jj Silicon solar cells
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