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16 Aug 2010

Volume 97, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 073101 (2010); http://dx.doi.org/10.1063/1.3478515 (3 pages)

Hon-Way Lin (林弘偉), Yu-Jung Lu (呂宥蓉), Hung-Ying Chen (陳虹穎), Hong-Mao Lee (李弘貿), and Shangjr Gwo (果尚志)
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InGaN/GaN nanorod array white light-emitting diode

Hon-Way Lin (林弘偉), Yu-Jung Lu (呂宥蓉), Hung-Ying Chen (陳虹穎), Hong-Mao Lee (李弘貿), and Shangjr Gwo (果尚志)

Appl. Phys. Lett. 97, 073101 (2010); http://dx.doi.org/10.1063/1.3478515 (3 pages) | Cited 41 times

Online Publication Date: 16 August 2010

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Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do not allow for efficient long-wavelength operation beyond the blue region due to a strong quantum confined Stark effect in lattice-mismatched polar InGaN quantum wells. Here we overcome the limitation by using self-assembled GaN nanorod arrays as strain-free growth templates for thick InGaN nanodisks. In combination with enhanced carrier localization and high crystalline quality, this approach allows us to realize full-color InGaN nanodisk emitters. By tailoring the numbers, positions, and thicknesses of polychromatic nanodisk ensembles embedded vertically in the GaN nanorod p-n junction, we are able to demonstrate natural white (color temperature ∼ 6000 K) electroluminescence from InGaN/GaN nanorod arrays.
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85.60.Jb Light-emitting devices
78.67.Qa Nanorods
78.67.De Quantum wells
78.20.Jq Electro-optical effects
78.60.Fi Electroluminescence
73.21.Fg Quantum wells
81.16.Dn Self-assembly

High current density, low threshold field emission from functionalized carbon nanotube bucky paper

Bhalchandra A. Kakade, Vijayamohanan K. Pillai, Dattatray J. Late, Padmakar G. Chavan, Farid J. Sheini, Mahendra A. More, and Dilip S. Joag

Appl. Phys. Lett. 97, 073102 (2010); http://dx.doi.org/10.1063/1.3479049 (3 pages) | Cited 2 times

Online Publication Date: 16 August 2010

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Field emission studies of bucky paper of multiwalled carbon nanotubes (MWNTs), prepared after microwave (MW) assisted acid functionalization are reported along with a comparison with that of “as-grown” sample. MW treated bucky papers reveal an interesting linear field emission behavior in Fowler–Nordheim plot. The field emission currents at preset value are found to be remarkably stable over a period of more than 3 h sustaining current densities of 4.9 mA/cm2 and 8.5 mA/cm2 for “as-grown” and functionalized sample, respectively. The enhancement in the field emission due to functionalization has been discussed in terms of tip opening and defect induced charge transport caused by intershell and intertubular interaction.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Wp Fullerenes and related materials

Oxygen incorporation in Ti2AlC: Tuning of anisotropic conductivity

J. Rosen, M. Dahlqvist, S. I. Simak, D. R. McKenzie, and M. M. M. Bilek

Appl. Phys. Lett. 97, 073103 (2010); http://dx.doi.org/10.1063/1.3472280 (3 pages) | Cited 3 times

Online Publication Date: 17 August 2010

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The substitution of oxygen for carbon in Ti2AlC M(n+1)AXn (MAX) phase, forming Ti2AlC1−xOx, has recently been reported. In this paper we simulate the effect of oxygen incorporation on mechanical and electronic properties using ab initio calculations. While the mechanical properties are not sensitive to the change in composition, the electronic properties can be tuned by varying the oxygen concentration. As the concentration increases, the conduction changes from in plane, typical of MAX phases, to conduction also in the c-direction. The conduction along c passes from insulating to n-type and then finally to p-type. These findings reveal an anisotropic semiconducting material.
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72.80.Jc Other crystalline inorganic semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
71.20.Nr Semiconductor compounds
62.20.dq Other elastic constants

Surface carrier recombination of a silicon tip under high electric field

B. Mazumder, A. Vella, F. Vurpillot, G. Martel, and B. Deconihout

Appl. Phys. Lett. 97, 073104 (2010); http://dx.doi.org/10.1063/1.3473816 (3 pages) | Cited 5 times

Online Publication Date: 17 August 2010

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Using laser assisted atom probe tomography, we investigate the surface recombination processes of a subwavelength Si tip illuminated by an ultrashort laser pulse under high electric field. In practice, by changing the laser wavelength, we demonstrate the presence of a very long electron-phonon relaxation time at the surface. It is experimentally shown that this behavior is common to indirect band gap semiconductors. Furthermore, a simple model is developed in this paper to explain laser wavelength dependence of our experimental results and estimate the surface recombination time.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
72.80.Cw Elemental semiconductors
71.38.-k Polarons and electron-phonon interactions

Local strain in tunneling transistors based on graphene nanoribbons

Yang Lu and Jing Guo

Appl. Phys. Lett. 97, 073105 (2010); http://dx.doi.org/10.1063/1.3479915 (3 pages) | Cited 6 times

Online Publication Date: 17 August 2010

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A band-to-band tunneling field-effect transistor (FET) can achieve a subthreshold slope steeper than 60 mV/dec at room temperature, but the on-current is low due to existence of the tunneling barrier. Graphene has a monolayer-thin body which is amenable to strain. By using self-consistent quantum transport simulations, we show that with local strain applied at the tunneling junction between the source and the channel in a graphene nanoribbon tunneling FET, the on-current can be significantly improved by over a factor of 10 with the same off-current, no matter at the ballistic limit or in the presence of inelastic phonon scattering.
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85.30.Tv Field effect devices
63.22.Kn Clusters and nanocrystals

Coherent elastic waves in a one-dimensional polymer hypersonic crystal

P. M. Walker, J. S. Sharp, A. V. Akimov, and A. J. Kent

Appl. Phys. Lett. 97, 073106 (2010); http://dx.doi.org/10.1063/1.3479929 (3 pages) | Cited 6 times

Online Publication Date: 17 August 2010

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Using the methods of picosecond acoustics, we inject high amplitude hypersonic wavepackets into a polymer superlattice and optically detect the propagating coherent elastic waves. The spectrum of the optically detected signal shows the elastic modes typical for folded phonon dispersion curves. The experimental results and related modeling show the feasibility of using polymer one-dimensional hypersonic crystals as acoustic devices in the gigahertz frequency range.
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62.65.+k Acoustical properties of solids
62.30.+d Mechanical and elastic waves; vibrations
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Low-noise submicron channel graphene nanoribbons

Guangyu Xu, Jingwei Bai, Carlos M. Torres, Jr., Emil B. Song, Jianshi Tang, Yi Zhou, Xiangfeng Duan, Yuegang Zhang, and Kang L. Wang

Appl. Phys. Lett. 97, 073107 (2010); http://dx.doi.org/10.1063/1.3481351 (3 pages) | Cited 3 times

Online Publication Date: 18 August 2010

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We present a graphene nanoribbon fabrication method based on a nanowire mask. Using a four-probe setup, single-layer nanoribbon (SLR) and bilayer nanoribbon (BLR) show low-frequency noise levels lower than (comparable to) the SLRs (BLRs) achieved by hydrogen-silsesquioxane based methods. Submicron channel SLR and BLR both show conductance quantization at 77 K, which suggests that quasi-one-dimensional quantum transport can be achieved. The conductance plateaus in BLR are less pronounced than those in SLR.
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81.05.ue Graphene
61.48.Gh Structure of graphene
68.65.La Quantum wires (patterned in quantum wells)

Large thermoelectric figure of merit for three-dimensional topological Anderson insulators via line dislocation engineering

O. A. Tretiakov, Ar. Abanov, Shuichi Murakami, and Jairo Sinova

Appl. Phys. Lett. 97, 073108 (2010); http://dx.doi.org/10.1063/1.3481382 (3 pages) | Cited 9 times

Online Publication Date: 18 August 2010

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We study the thermoelectric properties of three-dimensional topological Anderson insulators with line dislocations. We show that at high densities of dislocations the thermoelectric figure of merit ZT can be dominated by one-dimensional topologically protected conducting states channeled through the lattice screw dislocations in the topological insulator materials with a nonzero time-reversal-invariant momentum such as Bi0.9Sb0.1. When the chemical potential does not exceed much the mobility edge the ZT at room temperatures can reach large values, much higher than unity for reasonable parameters, hence making this system a strong candidate for applications in heat management of nanodevices.
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72.20.Pa Thermoelectric and thermomagnetic effects
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Surface electronic structure of ZrB2 buffer layers for GaN growth on Si wafers

Yukiko Yamada-Takamura, Fabio Bussolotti, Antoine Fleurence, Sambhunath Bera, and Rainer Friedlein

Appl. Phys. Lett. 97, 073109 (2010); http://dx.doi.org/10.1063/1.3481414 (3 pages)

Online Publication Date: 18 August 2010

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The electronic structure of epitaxial, predominantly single-crystalline thin films of zirconium diboride (ZrB2), a lattice-matching, conductive ceramic to GaN, grown on Si(111) was studied using angle-resolved ultraviolet photoelectron spectroscopy. The existence of Zr-derived surface states dispersing along the math-math direction indicates a metallic character provided by a two-dimensional Zr-layer at the surface. Together with the measured work function, the results demonstrate that the surface electronic properties of such thin ZrB2(0001) buffer layers are comparable to those of the single crystals promising excellent conduction between nitride layers and the substrate in vertical light-emitting diodes on economic substrates.
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73.20.At Surface states, band structure, electron density of states
68.55.ag Semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Ey III-V semiconductors
73.61.At Metal and metallic alloys

Composite metal/quantum-dot nanoparticle-array waveguides with compensated loss

Petter Holmström, Lars Thylén, and Alexander Bratkovsky

Appl. Phys. Lett. 97, 073110 (2010); http://dx.doi.org/10.1063/1.3467845 (3 pages) | Cited 6 times

Online Publication Date: 18 August 2010

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We calculate the dispersion properties of waveguides composed of near-field-coupled arrays of metal-clad quantum dots (QDs). The high optical loss incurred by operating the metal shells close to resonance is mitigated by using optical gain in the QDs. A condition for achieving loss compensated operation is given based on realistic material parameters and neglecting inhomogeneous broadening.
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42.79.Gn Optical waveguides and couplers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Near-field optical data storage using C-apertures

J. Brian Leen, Paul Hansen, Yao-Te Cheng, Aaron Gibby, and Lambertus Hesselink

Appl. Phys. Lett. 97, 073111 (2010); http://dx.doi.org/10.1063/1.3474801 (3 pages) | Cited 6 times

Online Publication Date: 18 August 2010

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We demonstrate the all-optical recording of deeply subwavelength data bits in Ge2Sb2Te5 using a near-field scanning optical microscope (NSOM) probe that utilizes a C-aperture fabricated using through membrane focused ion beam milling. Data bits recorded with various optical powers were read out optically by C-aperture NSOM and the physical bit size was measured by atomic force microscopy (AFM). Both optical and AFM measurements were found to be in excellent agreement with simulation. We achieved a minimum physical bit size of 53.5×50.2 nm2 at a wavelength of 980 nm (λ/20) indicating a data density of 223 Gbit/in.2.
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42.79.Vb Optical storage systems, optical disks
07.60.Pb Conventional optical microscopes
07.79.Lh Atomic force microscopes

High Q optomechanical resonators in silicon nitride nanophotonic circuits

K. Y. Fong, W. H. P. Pernice, Mo Li, and H. X. Tang

Appl. Phys. Lett. 97, 073112 (2010); http://dx.doi.org/10.1063/1.3480411 (3 pages) | Cited 16 times

Online Publication Date: 18 August 2010

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We demonstrate integrated photonic circuits made from stoichiometric silicon nitride for effective integration of high Q micromechanical resonators and nano-optical components. Using silicon bulk micromachining techniques we fabricate free-standing highly tensile nanostrings exceeding 400 μm in length. The nanostrings are actuated using gradient optical force and their mechanical motion is readout with a sensitive interferometric scheme. A mechanical Q of 340 000 is obtained in vacuum. This fully integrated optomechanical circuit presents a promising scheme for on-chip high Q mechanical sensing applications.
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42.82.-m Integrated optics
42.79.-e Optical elements, devices, and systems

Ultrafast all-optical modulator for 1.5 μm controlled by Ti:Al2O3 laser

M. V. Ermolenko, O. V. Buganov, S. A. Tikhomirov, V. V. Stankevich, S. V. Gaponenko, and A. S. Shulenkov

Appl. Phys. Lett. 97, 073113 (2010); http://dx.doi.org/10.1063/1.3475415 (3 pages) | Cited 3 times

Online Publication Date: 18 August 2010

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The concept of ultrafast light modulator for wavelength ∼ 1.5 μm controlled by fundamental harmonic of a Ti:Al2O3 laser has been demonstrated. The possibility of realization of this concept was experimentally confirmed. We have demonstrated strong spectrally wide nonlinear response in multilayer heterostructures based on GaAs/(AlGa)xOy with the relaxation time of 1–3 ps in the spectral range where both materials have negligible absorption.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Role of surrounding oxygen on oxide nanowire growth

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Tomoji Kawai, Masaru Suzuki, Yoshiki Hidaka, and Shoichi Kai

Appl. Phys. Lett. 97, 073114 (2010); http://dx.doi.org/10.1063/1.3474605 (3 pages) | Cited 11 times

Online Publication Date: 19 August 2010

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The ability to control oxide nanowires via vapor-liquid-solid (VLS) mechanism remains an important challenge to explore various applications of oxide nanowires. Here we demonstrate the crucial roles of surrounding oxygen on VLS grown SnO2 nanowires. When the partial pressure of surrounding oxygen is relatively low, the oxygen mainly acts as an oxygen source, promoting VLS growth. While for relatively high oxygen partial pressures, vapor-solid (VS) growth emerges, suppressing nanowire growth. The findings as to the roles of surrounding oxygen on the inherent competition between VLS and VS growths are in principle rather universal for VLS grown nanowires of various oxides.
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81.07.Gf Nanowires
81.10.Bk Growth from vapor
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

InGaN/GaN multiple quantum well concentrator solar cells

R. Dahal, J. Li, K. Aryal, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 97, 073115 (2010); http://dx.doi.org/10.1063/1.3481424 (3 pages) | Cited 21 times

Online Publication Date: 19 August 2010

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We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1−xN/GaN(x ∼ 0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.
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88.40.jp Multijunction solar cells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
88.40.hj Efficiency and performance of solar cells

Terahertz sensing with carbon nanotube layers coated on silica fibers: Carrier transport versus nanoantenna effects

Dalius Seliuta, Irmantas Kašalynas, Jan Macutkevic, Gintaras Valušis, Mikhail V. Shuba, Polina P. Kuzhir, Gregory Ya. Slepyan, Sergey A. Maksimenko, Vitaly K. Ksenevich, Vladimir Samuilov, and Qi Lu

Appl. Phys. Lett. 97, 073116 (2010); http://dx.doi.org/10.1063/1.3478009 (3 pages) | Cited 3 times

Online Publication Date: 19 August 2010

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Carbon nanotube layers prepared as coatings on silica fibers are found to be suitable for terahertz detection in 0.5–7.3 THz range within temperatures of 4.2–70 K. In time-domain of terahertz excitation, two following constituents in the photoresponse are discriminated: the first one is attributed to the bolometric effect while the other one is related to the photoconductivity caused by the terahertz-induced hopping effect. In frequency domain, nonmonotonic behavior of the photoconductivity is associated with prevailing carbon nanotube-induced antenna effects in the electronic transport. The experimental observations are supported by theoretical estimates.
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81.07.De Nanotubes
72.40.+w Photoconduction and photovoltaic effects
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
73.63.Fg Nanotubes

Anisotropic etching of diamond by molten Ni particles

W. Smirnov, J. J. Hees, D. Brink, W. Müller-Sebert, A. Kriele, O. A. Williams, and C. E. Nebel

Appl. Phys. Lett. 97, 073117 (2010); http://dx.doi.org/10.1063/1.3480602 (3 pages) | Cited 3 times

Online Publication Date: 19 August 2010

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multimedia

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Nanopores in insulating solid state membranes have recently attracted much interest in the field of probing, characterizing, and manipulating single linear polymers such as DNA/RNA and proteins in their native environment. Here a low cost, fast, and effective way to produce nanostructures such as pyramidal shaped nanopores and nanochannels with dimensions down to about 15 nm in diamond membranes without any need for electron-beam lithography is demonstrated. By use of a catalytic process, anisotropic etching of diamond with self-organized Ni nanoparticles in hydrogen atmosphere at 900 °C is achieved and possible etching mechanisms are discussed. It is shown that diamond planes with the crystallographic orientation of [111] are etched slowest with this method.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
36.20.-r Macromolecules and polymer molecules
81.65.Cf Surface cleaning, etching, patterning

Influence of electrode size on resistance switching effect in nanogap junctions

Hiroshi Suga, Masayo Horikawa, Shunsuke Odaka, Hisao Miyazaki, Kazuhito Tsukagoshi, Tetsuo Shimizu, and Yasuhisa Naitoh

Appl. Phys. Lett. 97, 073118 (2010); http://dx.doi.org/10.1063/1.3481067 (3 pages) | Cited 5 times

Online Publication Date: 20 August 2010

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The size dependence of the resistance switching effect in nanogap junctions was investigated to determine the nature of the local structural changes responsible for the effect. The maximum current, during resistance switching, decreased with the total emission area across the nanogap to an average of 146 μA at a linewidth of 45 nm. This implies that the resistance switching effect stems from changes in the gap width at multiple local sites on the metal surface.
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85.35.-p Nanoelectronic devices
85.75.Mm Spin polarized resonant tunnel junctions

Tailoring point electron sources of individual carbon nanotubes

Yung-Chang Lin, Cheng-Da Wu, and Po-Wen Chiu

Appl. Phys. Lett. 97, 073119 (2010); http://dx.doi.org/10.1063/1.3481690 (3 pages) | Cited 2 times

Online Publication Date: 20 August 2010

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We describe a technique for the fabrication of individual carbon nanotube electron field emitters on silicon substrates, with well-defined tunneling geometries and robust metal contacts. The suspended nanotube emitters have been produced by edge lithography on cleaved silicon substrate in conjunction with edge etching. The I–V curves acquired from the resulting emitters followed the Fowler–Nordheim law and exhibited a low operating voltage in a short cathode-anode distance. The extracted field enhancement factors were an order of magnitude higher than those obtained in an electron microscope but in good agreement with those reported in large-area measurements.
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81.07.De Nanotubes
85.35.Kt Nanotube devices
73.63.Fg Nanotubes
79.70.+q Field emission, ionization, evaporation, and desorption

On the transition-metal doping efficiency of zinc oxide nanocrystals

Tejinder Singh, T. J. Mountziaris, and Dimitrios Maroudas

Appl. Phys. Lett. 97, 073120 (2010); http://dx.doi.org/10.1063/1.3478216 (3 pages) | Cited 6 times

Online Publication Date: 20 August 2010

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Using first-principles density functional theory calculations, we investigate the mechanism of doping colloidal ZnO nanocrystals with the transition-metal elements Mn, Co, and Ni. We find that the dopant atoms have high binding energies for adsorption onto the Zn-vacancy site of the (0001) surface and the O-vacancy site of the (000math) surface of the wurtzite-structure ZnO crystal; therefore, these surface vacancies provide viable sites for substitutional doping, which is consistent with experimental measurements. However, the doping efficiencies are affected by the strong tendencies of the transition-metal dopants to segregate at the nanocrystal surface facets.
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61.72.uj III-V and II-VI semiconductors
61.72.jd Vacancies
68.43.Mn Adsorption kinetics
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.35.Dv Composition, segregation; defects and impurities
82.70.Dd Colloids

Image force microscopy of molecular resonance: A microscope principle

I. Rajapaksa, K. Uenal, and H. Kumar Wickramasinghe

Appl. Phys. Lett. 97, 073121 (2010); http://dx.doi.org/10.1063/1.3480608 (3 pages) | Cited 2 times

Online Publication Date: 20 August 2010

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We demonstrate a technique in microscopy which extends the domain of atomic force microscopy to optical spectroscopy at the nanometer scale. We show that molecular resonance of feature sizes down to the single molecular level can be detected and imaged purely by mechanical detection of the force gradient between the interaction of the optically driven molecular dipole and its mirror image in a platinum coated scanning probe tip. This microscopy and spectroscopy technique is extendable to frequencies ranging from radio to infrared and the ultraviolet.
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07.79.Lh Atomic force microscopes
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