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16 Aug 2010

Volume 97, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 073101 (2010); http://dx.doi.org/10.1063/1.3478515 (3 pages)

Hon-Way Lin (林弘偉), Yu-Jung Lu (呂宥蓉), Hung-Ying Chen (陳虹穎), Hong-Mao Lee (李弘貿), and Shangjr Gwo (果尚志)
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Indium induced step transformation during InGaN growth on GaN

D. D. Koleske, S. R. Lee, G. Thaler, M. H. Crawford, M. E. Coltrin, and K. C. Cross

Appl. Phys. Lett. 97, 071901 (2010); http://dx.doi.org/10.1063/1.3479414 (3 pages) | Cited 1 time

Online Publication Date: 16 August 2010

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The surface-step evolution of InGaN quantum-wells (QWs) was studied on GaN (0001). While the GaN template is dominated by single-monolayer steps the frequency of multiple-layer steps increases significantly when InGaN/GaN single- or multiple-QWs are grown. It is proposed that the InGaN multiple-layer step structure arises to partially accommodate the in-plane film strain which is insufficient to trigger bulk InGaN relaxation. This intrinsic multiple-layer step restructuring, when coupled with the strong piezoelectric fields present in the wurtzite group III-nitrides, could explain the enhanced carrier localization in InGaN QWs.
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81.07.St Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Microscale oscillating crack propagation in silicon nitride thin films

Donghyun Kim, Prashanth Makaram, and Carl V. Thompson

Appl. Phys. Lett. 97, 071902 (2010); http://dx.doi.org/10.1063/1.3480408 (3 pages)

Online Publication Date: 16 August 2010

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Controlled microscale (<50 μm) wavy cracks in silicon nitride thin films have been produced through a simple heating process. The crack paths were controlled by metal patterns under the silicon nitride thin films. Wavy crack characteristics were investigated by changing the metal, metal linewidths, metal thickness, and silicon nitride thickness. We discuss the differences in the characteristics and mechanisms of propagation of wavy cracks formed due to differential thermal expansion and those that result from thermal gradients.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mm Fracture
62.20.mt Cracks
65.40.De Thermal expansion; thermomechanical effects
68.60.Bs Mechanical and acoustical properties
81.40.Gh Other heat and thermomechanical treatments

Molecular beam epitaxy of N-polar InGaN

Digbijoy N. Nath, Emre Gür, Steven A. Ringel, and Siddharth Rajan

Appl. Phys. Lett. 97, 071903 (2010); http://dx.doi.org/10.1063/1.3478226 (3 pages) | Cited 9 times

Online Publication Date: 17 August 2010

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We report on the growth of N-polar InxGa1−xN by N2 plasma-assisted molecular beam epitaxy. Ga-polar and N-polar InGaN films were grown at different growth temperatures and the composition was estimated by photoluminescence (PL) measurements. A growth model that incorporates the incoming and desorbing atomic fluxes is proposed to explain the compositional dependence of InGaN on the flux of incoming atomic species and growth temperature. The growth model is found to be in agreement with the experimental data. The peak PL intensity for N-face samples is found to exhibit a two order of magnitude increase for a 100 °C increase in growth temperature. Besides, at 600 nm, the N-face sample shows more than 100 times higher PL intensity than Ga-face sample at comparable wavelengths indicating its superior optical quality. The understanding of growth kinetics of InGaN presented here will guide the growth of N-polar InGaN in a wide range of growth temperatures.
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81.05.Ea III-V semiconductors
68.55.ag Semiconductors
52.77.Dq Plasma-based ion implantation and deposition
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Mechanisms of complex morphological evolution during solid-state dewetting of single-crystal nickel thin films

Jongpil Ye and Carl V. Thompson

Appl. Phys. Lett. 97, 071904 (2010); http://dx.doi.org/10.1063/1.3480419 (3 pages) | Cited 2 times

Online Publication Date: 17 August 2010

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We report studies of complex morphological evolution during solid-state dewetting of 120 nm thick single-crystal Ni(100) and Ni(110) thin films on MgO(100) and MgO(110) substrates. During dewetting, holes that form in the Ni films evolve to complex shapes that depend on the crystallographic orientation of the films and annealing ambient. We characterize the origins of hole, line, and particle morphologies that develop during the dewetting process, and identify a sequence of instabilities that control the morphological evolution. This study provides mechanistic insights for control of dewetting to produce specific ordered structures.
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68.55.-a Thin film structure and morphology
68.55.J- Morphology of films
68.08.Bc Wetting
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Cc Kinetics of defect formation and annealing

High sensing properties of magnetic plasmon resonance in the double-rod and tri-rod structures

J. X. Cao, H. Liu, T. Li, S. M. Wang, Z. G. Dong, and S. N. Zhu

Appl. Phys. Lett. 97, 071905 (2010); http://dx.doi.org/10.1063/1.3481359 (3 pages) | Cited 2 times

Online Publication Date: 18 August 2010

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We numerically investigated the magnetic plasmon resonances in the double-rod and tri-rod structures (DRSs and TRSs) for sensing applications. Like localized surface plasmon modes in nanostructures, the magnetic plasmon resonance wavelengths are sensitive to refractive index changes in the environment medium. The electromagnetic fields near DRSs and TRSs were much more localized in the dielectric surrounding the structures at the resonance wavelengths, which caused the linewidth of magnetic responses narrower. A large figure of merit could be obtained in the magnetic plasmon modes of DRSs and TRSs, which enables the use of the structures as sensing elements with remarkable performance.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.22.Lp Collective excitations
78.20.Bh Theory, models, and numerical simulation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Defect activation in willemite-type Zn2GeO4 by nanocrystallization

Yoshihiro Takahashi, Masataka Ando, Kenichiro Iwasaki, Hirokazu Masai, and Takumi Fujiwara

Appl. Phys. Lett. 97, 071906 (2010); http://dx.doi.org/10.1063/1.3481081 (3 pages) | Cited 5 times

Online Publication Date: 19 August 2010

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We demonstrated the selective introduction of interstitial Zn defects (Zni•) into willemite-type semiconductive Zn2GeO4 by nanocrystallization of 15Li2O–15ZnO–70GeO2 glass. The resulting nanocrystallized glass consisting of Zn2GeO4 exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zni• is produced by capturing a zinc ion through six-membered rings of the Zn2GeO4 phase during nanocrystallization and the excess Zni• acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.
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61.72.jj Interstitials
61.43.Fs Glasses
78.55.Hx Other solid inorganic materials
71.55.-i Impurity and defect levels

Formation of antiphase domains in NiFe2O4 thin films deposited on different substrates

R. Datta, S. Kanuri, S. V. Karthik, D. Mazumdar, J. X. Ma, and A. Gupta

Appl. Phys. Lett. 97, 071907 (2010); http://dx.doi.org/10.1063/1.3481365 (3 pages) | Cited 7 times

Online Publication Date: 19 August 2010

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Thin films of NiFe2O4 have been deposited on various substrates using pulsed laser deposition and the defect structures investigated by transmission electron microscopy. Owing to the simultaneous nucleation of cation-disordered sites during the nonequilibrium growth, the NiFe2O4 films exhibit antiphase domains of ∼ 20 nm, irrespective of the substrate symmetry. For growth on isostructural spinel substrates, the density of antiphase appears to decrease with decreasing lattice mismatch. Aberration corrected high resolution transmission electron microscopy reveals that the interchange of equivalent tetrahedral cation positions in the host oxygen sublattice as one of the possible mechanisms leading to the formation of antiphase domains.
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81.15.Fg Pulsed laser ablation deposition
68.55.at Other materials
75.50.Gg Ferrimagnetics
68.37.Og High-resolution transmission electron microscopy (HRTEM)
61.72.Mm Grain and twin boundaries
71.55.Ht Other nonmetals

Structure and stoichiometry of (0001) 4H–SiC/oxide interface

Xingguang Zhu, Hang Dong Lee, Tian Feng, Ayayi C. Ahyi, Daniel Mastrogiovanni, Alan Wan, Eric Garfunkel, John R. Williams, Torgny Gustafsson, and Leonard C. Feldman

Appl. Phys. Lett. 97, 071908 (2010); http://dx.doi.org/10.1063/1.3481672 (3 pages) | Cited 2 times

Online Publication Date: 19 August 2010

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The 4H–SiC/SiO2 interface is a major obstacle that hampers SiC device applications. The nature of the transition region stoichiometry and structure need to be elucidated to both understand and improve such devices. In this paper, we use medium energy ion scattering on device grade structures to examine critical aspects of this dielectric/semiconductor structure. Our findings indicate no excess C greater than 1.8×1014 cm−2 from the oxide surface down to a few monolayers beneath the SiC/SiO2 interface, setting limits on the previously predicted nonstoichiometric transition region on the dielectric side.
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71.20.Nr Semiconductor compounds
61.66.Bi Elemental solids
61.66.Dk Alloys

Surface plasmon-enhanced light emission using silver nanoparticles embedded in ZnO

X. H. Xiao, F. Ren, X. D. Zhou, T. C. Peng, W. Wu, X. N. Peng, X. F. Yu, and C. Z. Jiang

Appl. Phys. Lett. 97, 071909 (2010); http://dx.doi.org/10.1063/1.3480417 (3 pages) | Cited 12 times

Online Publication Date: 19 August 2010

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The Ag nanoparticles-SiO2–ZnO film sandwiched structure was fabricated by depositing ZnO films on silica substrates which had been implanted by Ag ions. Enhancement of emission of the sandwiched structure was observed. The enhancement emission is caused by the resonant coupling between the surface plasmons of Ag and the spontaneous emission of ZnO. The enhancement mechanism is confirmed by optical absorption spectra, transmission electron microscopy, and time-resolved photoluminescence. The key is to deposit ZnO on Ag nanoparticles covered with silica to prevent oxidation of Ag by direct contact with ZnO. This structure will be very useful for highly efficient optoelectronic devices.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
68.55.ag Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.55.Et II-VI semiconductors

A critical factor affecting on the performance of blue-violet InGaN multiquantum well laser diodes: Nonradiative centers

D. M. Shin, J. Park, D. H. Nguyen, Y. D. Jang, K. J. Yee, D. Lee, Y. H. Choi, S. K. Jung, and M. S. Noh

Appl. Phys. Lett. 97, 071910 (2010); http://dx.doi.org/10.1063/1.3481091 (3 pages) | Cited 1 time

Online Publication Date: 20 August 2010

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Carrier lifetime at room temperature (RT) was measured for blue-violet emitting InGaN multiquantum wells as a function of excitation intensity. The carrier lifetime of a p/n-doped waveguide sample (PNLD) was longer than those of undoped or n-doped waveguide samples. For PNLD, the long decay component became dominant at moderate excitation, in contrast to the others for which the fast decaying component remained dominant. The lifetime behavior of PNLD, in conjunction with its strong photoluminescence intensity, originates from the reduction of nonradiative centers. We conclude that the defect density is an important determinant of the RT performance of blue-violet laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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