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Applied Physics Letters / Volume 97 / Issue 8 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 081103 (2010); http://dx.doi.org/10.1063/1.3481692 (3 pages)

GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

Wei-Chih Lai, Ya-Yu Yang, Li-Chi Peng, Shih-Wei Yang, Yu-Ru Lin, and Jinn-Kong Sheu

Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

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(Received 29 June 2010; accepted 29 July 2010; published online 23 August 2010)

We demonstrated GaN-based light emitting diodes (LEDs) with different embedded heights of SiO2 pillars and air gap array structures. The air gap on top of the SiO2 pillars were also realized using the enhanced epitaxial lateral overgrowth mode. With the embedded SiO2 pillars and air gap array structures, we achieved a smaller reverse leakage current due to the lateral growth-induced crystal quality improvement. Moreover, under 20 mA current injections, the output powers were 3.04, 4.23, 4.66, and 4.44 mW for conventional LED, LEDs with embedded 200 and 500 nm height of SiO2 pillars and air gaps, 500 nm height of SiO2 pillars and air gaps, and 700 and 400 nm height of SiO2 pillars and air gaps, respectively. We found that the embedded 500 nm height SiO2 pillars and 500 nm height air gap array structures could enhance LED output power by more than 50% due to the enhanced guided-light scattering efficiency in our study.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

air gaps, gallium compounds, III-V semiconductors, light emitting diodes, light scattering, silicon compounds, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481692

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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