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Applied Physics Letters / Volume 97 / Issue 8 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 081107 (2010); http://dx.doi.org/10.1063/1.3480414 (3 pages)

Surface plasmon induced exciton redistribution in ZnCdO/ZnO coaxial multiquantum-well nanowires

B. Liu1, C. W. Cheng1, R. Chen1, S. A. Ekahana1, W. F. Yang1, S. J. Wang2, T. C. Sum1, Z. X. Shen1, H. J. Fan1, and H. D. Sun1

1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
2Institute of Materials Research and Engineering, Singapore 117602, Singapore

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(Received 10 June 2010; accepted 28 July 2010; published online 24 August 2010)

The authors present the surface plasmon effects of Au nanoparticles on the photoluminescence properties of ZnCdO/ZnO coaxial multiquantum-well nanowires fabricated using chemical vapor deposition and pulse laser deposition methods. The spontaneous emission rate from ZnCdO quantum wells was increased by surface plasmon coupling by 1.29 times. The strong plasmon coupling between ZnO barriers and Au nanoparticles provides an extra fast decay channel for excitons generated in ZnO barrier layer and leads to exciton redistribution in ZnCdO/ZnO coaxial quantum wells, which promotes radiative recombination in ZnO barriers but reduces the number of excitons relaxing into the ZnCdO quantum wells.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cadmium compounds, chemical vapour deposition, electron-hole recombination, excitons, II-VI semiconductors, nanoparticles, nanowires, photoluminescence, pulsed laser deposition, semiconductor quantum wells, semiconductor quantum wires, spontaneous emission, surface plasmons, wide band gap semiconductors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3480414

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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