Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes

Yerci, S.; Li, R.; Dal Negro, L.

doi:doi:10.1063/1.3483771

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Ultrathin silicon nitride microring resonator for biophotonic applications at 970 nm wavelength

We experimentally demonstrate a high-Q ultrathin silicon nitride microring resonator operating at wavelength of 970 nm that is favorable for large variety of biophotonic applications. Implementation of thin device layer of 200 nm allows enhanced interaction between the optical mode and environment, while still maintaining high quality factor of resonator. In addition, we show the importance of spectral window around 970 nm to improve device sensing capability.

Magnetically assisted quantum cascade laser emitting from 740 GHz to 1.4 THz

In this paper we show that by applying a perpendicular magnetic field to a quantum cascade structure it is possible to enhance the gain of different optical transitions. The combination of magnetic confinement with a broadband, cutoff-free optical resonator allows the demonstration of laser action over a large bandwidth, from 733 GHz to 1.38 THz together with the emission at 3.2 THz. A different lasing scheme is revealed that does not rely on resonant tunneling as the main injection mechanism. ...

Electrical devices based on Erbium (Er) doping of silicon nitride have been fabricated by reactive cosputtering and intense, room temperature Er electroluminescence was observed in the visible (527, 550, and 660 nm) and near-infrared (980 and 1535 nm) spectral ranges at low injection voltages (<5 V EL turn on). The electrical transport mechanism in these devices was investigated and the excitation cross section for the 1535 nm Er emission was measured under electrical pumping, resulting in a value (1.2×10⁻¹⁵ cm²) comparable to optical pumping. These results indicate that Er-doped silicon nitride has a large potential for the engineering of light sources compatible with Si technology.

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KEYWORDS and PACS

Keywords

doping, electroluminescence, electroluminescent devices, erbium, infrared spectra, light emitting diodes, photoexcitation, silicon compounds, sputter deposition, visible spectra

PACS

85.60.Jb

Light-emitting devices

ARTICLE DATA

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http://dx.doi.org/10.1063/1.3483771

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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