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Applied Physics Letters / Volume 97 / Issue 8 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 081111 (2010); http://dx.doi.org/10.1063/1.3483768 (3 pages)

Electron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates

Shinji Koh, Akira Nakanishi, and Hitoshi Kawaguchi

Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

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(Received 21 June 2010; accepted 7 August 2010; published online 26 August 2010)

We measured the electron spin relaxation times τs in GaAs/AlGaAs multiple quantum wells (MQWs) grown on slightly misoriented GaAs(110) substrates. The τs of the MQW on misoriented GaAs(110) decreased when the misorientation angles were increased. The bulk inversion asymmetry component of the D’yakonov–Perel’ spin relaxation in the misoriented (110) MQWs was calculated to verify the origin of the decrease in the τs. A comparison between the experimental and calculated results revealed that the decrease in the τs was attributed to the emergence of in-plane effective magnetic fields in the (110) MQWs due to the misorientation.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, carrier lifetime, electron relaxation time, gallium arsenide, III-V semiconductors, semiconductor quantum wells

PACS

  • 73.63.Hs

    Quantum wells

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3483768

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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