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Applied Physics Letters / Volume 97 / Issue 8 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 081902 (2010); http://dx.doi.org/10.1063/1.3479501 (3 pages)

Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

Ashish Arora1, Sandip Ghosh1, B. M. Arora1, Stefan Malzer2, and Gottfried Döhler2

1Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
2Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1, Bau 24, 91058 Erlangen, Germany

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(Received 9 March 2010; accepted 23 July 2010; published online 23 August 2010)

Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/Al0.3Ga0.7As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mm∥y) and narrow width (10 and 20 μm∥x) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization E∥x, compared to E∥y. The heavy-hole exciton transition shows a weaker polarization anisotropy of opposite sign, being stronger for E∥y. Through calculations based on the Bir–Pikus Hamiltonian, the observed in-plane optical polarization anisotropy is shown to arise from valence band mixing induced by anisotropic strain in the plane of quantum wells.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, excitons, gallium arsenide, ground states, III-V semiconductors, photoconductivity, quantum well devices, semiconductor quantum wells, valence bands

PACS

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3479501

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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