Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates

Chauveau, J.-M.; Teisseire, M.; Kim-Chauveau, H.; Deparis, C.; Morhain, C.; Vinter, B.

doi:doi:10.1063/1.3481078

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/Al0.3Ga0.7As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mm∥y) and narrow width (10 and 20 μm∥x) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization E∥x, compared to E∥y. The heavy-hole exciton transition shows a weaker polariza...

Passive self-tuning energy harvester for extracting energy from rotational motion

This paper presents experiments and models of a passive self-tuning energy harvester for rotational vibration applications. Tensile stress due to centrifugal force in a radially oriented piezoelectric cantilever beam passively tunes the resonant frequency so that the harvester remains at or near its resonant frequency. Because centrifugal force is proportional to the square of driving frequency, the resonant frequency of an optimized harvester can track and match the driving frequency over a wi...

We report on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells (QW) homoepitaxially grown by molecular beam epitaxy on a-plane ZnO substrates. We demonstrate a drastic improvement of the structural properties. We compare the photoluminescence properties of nonpolar homoepitaxial QWs and nonpolar heteroepitaxial QWs grown on sapphire and show that the reduction in structural defects and the improvement of surface morphology are correlated with a strong enhancement of the photoluminescence properties: reduction in full width at half maximum, strong increase in the luminescence intensities and their thermal stability. The comparison convincingly demonstrates the interest of homoepitaxial nonpolar QWs for bright UV emission applications.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

II-VI semiconductors, magnesium compounds, molecular beam epitaxial growth, photoluminescence, semiconductor quantum wells, surface morphology, thermal stability, zinc compounds

PACS

81.07.St

Quantum wells
78.55.Et

II-VI semiconductors
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.35.B-

Structure of clean surfaces (and surface reconstruction)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3481078

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

For access to citing articles, you need to log in.

Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)