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Applied Physics Letters / Volume 97 / Issue 8 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
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Appl. Phys. Lett. 97, 081905 (2010); http://dx.doi.org/10.1063/1.3482938 (3 pages)

White light emission from amorphous silicon oxycarbide (a-SiCxOy) thin films: Role of composition and postdeposition annealing

Spyros Gallis, Vasileios Nikas, Himani Suhag, Mengbing Huang, and Alain E. Kaloyeros

College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203, USA

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(Received 6 June 2010; accepted 4 August 2010; published online 24 August 2010)

The effects of carbon and postdeposition annealing on white luminescence are studied in amorphous silicon oxycarbide (a-SiCxOy) films grown by chemical vapor deposition. The films showed strong room-temperature luminescence in a broad spectral range from blue-violet to near infrared, depending on excitation energy. Photoluminescence (PL) intensity exhibited good correlation with SiOC bond concentration. At low C (<5%), matrix PL was completely quenched after annealing in O2 even at 500 °C. PL was unaffected by O2 annealing at higher C, and could be enhanced when excited by an ultraviolet laser. These findings are correlated to C- and Si-related O defect centers as luminescence sources in a-SiCxOy.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous semiconductors, annealing, chemical vapour deposition, photoluminescence, radiation quenching, silicon compounds, thin films

PACS

  • 78.55.Qr

    Amorphous materials; glasses and other disordered solids

  • 61.43.Dq

    Amorphous semiconductors, metals, and alloys

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 78.66.Jg

    Amorphous semiconductors; glasses

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3482938

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Room-temperature PL for as-deposited a-SiCxOy at various C values. The cut-off around 475 nm is due to an optical filter.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Room-temperature PL of a-SiC0.32O1.56 (11 at. % C) annealed at different temperatures in O2. The inset shows the PL spectra of SiO2-like (a-SiC0.08O1.6) pre- and post-O2 passivation at 500 °C and 700 °C. (b) Integrated PL intensity of a-SiC0.32O1.56 as a function of annealing for both O2 and forming gas passivation.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) FTIR spectra of as-deposited a-SiCxOy for different C contents. The dashed line corresponds to deconvolution of FTIR signals of a-SiC0.36O1.40. (b) Integrated PL intensity and SiOC peak absorption around ∼ 437 cm−1 as a function of C.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Room-temperature PL spectra of a-SiC0.32O1.56 pre- and post-O2 annealing at 500 °C. The inset is a camera photo of observed luminescence post annealing in O2 at 500 °C.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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