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Applied Physics Letters / Volume 97 / Issue 8 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 083501 (2010); http://dx.doi.org/10.1063/1.3481361 (3 pages)

Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications

Chih-Ming Lin1,2, Ting-Ta Yen1,2, Valery V. Felmetsger3, Matthew A. Hopcroft2,4, Jan H. Kuypers2, and Albert P. Pisano1,2

1Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA
2Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, USA
3OEM Group Incorporated, Gilbert, Arizona 85233, USA
4Hewlett-Packard Labs, Palo Alto, California 94304, USA

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(Received 1 July 2010; accepted 29 July 2010; published online 23 August 2010)

In this letter, temperature compensation for aluminum nitride (AlN) Lamb wave resonators operating at high temperature is presented. By adding a compensating layer of silicon dioxide (SiO2), the turnover temperature can be designed for high temperature operation by varying the normalized AlN film thickness (hAlN/λ) and the normalized SiO2 film thickness (hSiO2/λ). With different designs of hAlN/λ and hSiO2/λ, the Lamb wave resonators were well temperature-compensated at 214 °C, 430 °C, and 542 °C, respectively. The experimental results demonstrate that the thermally compensated AlN Lamb wave resonators are promising for frequency control and sensing applications at high temperature.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, high-temperature effects, III-V semiconductors, membranes, silicon compounds, surface acoustic wave resonators, wide band gap semiconductors

PACS

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481361

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    T. E. Parker and M. B. Schulz, Appl. Phys. Lett. 26, 75 (1975)APPLAB000026000003000075000001.

    R. Melamud, B. Kim, S. A. Chandorkar, M. A. Hopcroft, M. Agarwal, C. M. Jha, and T. W. Kenny, Appl. Phys. Lett. 90, 244107 (2007)APPLAB000090000024244107000001.

    S. Spinner and G. W. Cleek, J. Appl. Phys. 31, 1407 (1960)JAPIAU000031000008001407000001.


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