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23 Aug 2010

Volume 97, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 081901 (2010); http://dx.doi.org/10.1063/1.3457448 (3 pages)

Zhaofeng Li, Rongkuo Zhao, Thomas Koschny, Maria Kafesaki, Kamil Boratay Alici, Evrim Colak, Humeyra Caglayan, Ekmel Ozbay, and C. M. Soukoulis
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Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications

Chih-Ming Lin, Ting-Ta Yen, Valery V. Felmetsger, Matthew A. Hopcroft, Jan H. Kuypers, and Albert P. Pisano

Appl. Phys. Lett. 97, 083501 (2010); http://dx.doi.org/10.1063/1.3481361 (3 pages) | Cited 13 times

Online Publication Date: 23 August 2010

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In this letter, temperature compensation for aluminum nitride (AlN) Lamb wave resonators operating at high temperature is presented. By adding a compensating layer of silicon dioxide (SiO2), the turnover temperature can be designed for high temperature operation by varying the normalized AlN film thickness (hAlN/λ) and the normalized SiO2 film thickness (hSiO2/λ). With different designs of hAlN/λ and hSiO2/λ, the Lamb wave resonators were well temperature-compensated at 214 °C, 430 °C, and 542 °C, respectively. The experimental results demonstrate that the thermally compensated AlN Lamb wave resonators are promising for frequency control and sensing applications at high temperature.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

C. Chen, Y. C. Yang, F. Zeng, and F. Pan

Appl. Phys. Lett. 97, 083502 (2010); http://dx.doi.org/10.1063/1.3483158 (3 pages) | Cited 12 times

Online Publication Date: 23 August 2010

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Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 103, long retention time of >106 s and good endurance of >103 were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films.
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84.30.Sk Pulse and digital circuits

Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions

Michelle J. Price, Justin M. Foley, Robert A. May, and Stephen Maldonado

Appl. Phys. Lett. 97, 083503 (2010); http://dx.doi.org/10.1063/1.3480599 (3 pages) | Cited 8 times

Online Publication Date: 23 August 2010

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Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, vn, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.
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72.40.+w Photoconduction and photovoltaic effects
61.41.+e Polymers, elastomers, and plastics
81.05.Cy Elemental semiconductors
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Ga2Te3 phase change material for low-power phase change memory application

Hao Zhu, Jiang Yin, Yidong Xia, and Zhiguo Liu

Appl. Phys. Lett. 97, 083504 (2010); http://dx.doi.org/10.1063/1.3483762 (3 pages) | Cited 5 times

Online Publication Date: 24 August 2010

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Ga2Te3 films show a higher crystallization temperature, wider band gap, better data retention ability (keeping the amorphous state at 112 °C for ten years), and higher room-temperature resistivity of the crystalline state as compared with Ge2Sb2Te5. Ga2Te3 phase change memory cells with an effective diameter of 1 μm also show fast switching speed. The set operation was done by a 400 ns-2.4 V pulse, and the reset operation was done by a 30 ns-5.5 V pulse. The dynamic switching ratio between the OFF and ON states is over than 103.
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84.30.Sk Pulse and digital circuits

High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors

Po-Tsun Liu, Yi-Teh Chou, Li-Feng Teng, and Chur-Shyang Fuh

Appl. Phys. Lett. 97, 083505 (2010); http://dx.doi.org/10.1063/1.3483616 (3 pages) | Cited 7 times

Online Publication Date: 25 August 2010

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Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm2/V s and hole mobility of 0.15 cm2/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications.
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85.30.Tv Field effect devices
81.40.Gh Other heat and thermomechanical treatments
81.05.Hd Other semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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