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23 Aug 2010

Volume 97, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 97, 081901 (2010); http://dx.doi.org/10.1063/1.3457448 (3 pages)

Zhaofeng Li, Rongkuo Zhao, Thomas Koschny, Maria Kafesaki, Kamil Boratay Alici, Evrim Colak, Humeyra Caglayan, Ekmel Ozbay, and C. M. Soukoulis
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The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition

A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo, and R. M. Wallace

Appl. Phys. Lett. 97, 082901 (2010); http://dx.doi.org/10.1063/1.3479908 (3 pages) | Cited 8 times

Online Publication Date: 24 August 2010

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We present a study of the nucleation of atomic layer deposition of Al2O3 on highly oriented pyrolytic graphite (HOPG) using trimethlyaluminum (TMA) with ozone as the oxidant (TMA/O3). In situ x-ray photoelectron spectroscopy (XPS) is used to study TMA/O3 depositions on HOPG. We examine the dependence of TMA/O3 nucleation on deposition temperature and characterize the morphology and uniformity of deposited films by ex situ atomic force microscopy. The impact of several predeposition surface treatments of the graphite surface condition is discussed, particularly with regard to the presence of adsorbed atmospheric contamination.
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81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.43.Mn Adsorption kinetics

Oxygen migration at Pt/HfO2/Pt interface under bias operation

T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, and T. Chikyow

Appl. Phys. Lett. 97, 082902 (2010); http://dx.doi.org/10.1063/1.3483756 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2010

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The interfacial electronic states of a Pt/HfO2/Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/HfO2/Pt diode increased the Pt–O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf–Pt bonding. We achieved the direct observation of oxygen migration at a Pt/HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.
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85.30.Tv Field effect devices
73.40.Rw Metal-insulator-metal structures

Large pyroelectric effect in Fe-doped lithium niobate induced by a high-power short-pulse laser

Kenji Kitamura, Hideki Hatano, Shunji Takekawa, Daniel Schütze, and Masakazu Aono

Appl. Phys. Lett. 97, 082903 (2010); http://dx.doi.org/10.1063/1.3481380 (3 pages) | Cited 3 times

Online Publication Date: 27 August 2010

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We demonstrate the pyroelectric effect induced by a short pulse laser with an intensity up to 6 MW/cm2 which is used to heat the Fe-doped Lithium niobate crystal. 0.2 °C temperature rise induced by a 10 ns laser pulse causes a very large current peak (up to 25 mA) since the rate of temperature rise is extremely large comparing with that induced by using an ordinary heater. On the other hand, the pyroelectric current during the cooling is much smaller because of the slow cooling rate by thermal conduction.
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77.70.+a Pyroelectric and electrocaloric effects
61.72.up Other materials
77.80.-e Ferroelectricity and antiferroelectricity
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