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Applied Physics Letters / Volume 97 / Issue 9 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 091102 (2010); http://dx.doi.org/10.1063/1.3485064 (3 pages)

Surface plasmon enhanced responsivity in a waveguided germanium metal-semiconductor-metal photodetector

Fang-Fang Ren, Kah-Wee Ang, Junfeng Song, Qing Fang, Mingbin Yu, Guo-Qiang Lo, and Dim-Lee Kwong

Institute of Microelectronics, Agency of Science and Technology Research (A*STAR), 11 Science Park Road, Singapore Science Park II, Singapore 117685

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(Received 11 June 2010; accepted 12 August 2010; published online 30 August 2010)

The authors report on high transverse magnetic (TM)-mode responsivity in a waveguided germanium Schottky-barrier metal-semiconductor-metal photodetector on silicon-on-insulator substrate for operating wavelength at 1550 nm. The employed aluminum interdigitated electrodes act as a one-dimensional rectangular grating above the depletion layer. By means of properly designed finger dimensions, surface plasmon polariton resonances can be excited at the interface of metal and silicon interfacial layer due to grating coupling. The resulting strong field intensities reach into active region, enabling high absorption under TM injection. At a voltage of 1 V, the TM-mode photocurrent is measured over three times than that of transverse electric mode, in spite of the relatively larger TM insertion loss in the silicon waveguide.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

absorption, elemental semiconductors, germanium, metal-semiconductor-metal structures, photodetectors, polaritons, Schottky barriers, surface plasmon resonance

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3485064

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Z. Yu, G. Veronis, S. Fan, and M. L. Brongersma, Appl. Phys. Lett. 89, 151116 (2006)APPLAB000089000015151116000001.


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