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Applied Physics Letters / Volume 97 / Issue 9 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 091104 (2010); http://dx.doi.org/10.1063/1.3486169 (3 pages)

Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection

Y. F. Lao1, P. K. D. D. P. Pitigala1, A. G. U. Perera1, H. C. Liu2, M. Buchanan2, Z. R. Wasilewski2, K. K. Choi3, and P. Wijewarnasuriya3

1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
2Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1A 0R6, Canada
3U.S. Army Research Laboratory, Adelphi, Maryland 20783-1197, USA

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(Received 15 June 2010; accepted 16 August 2010; published online 2 September 2010)

Hole transitions from the heavy-hole (hh) to the light-hole (lh) band contributing to the 4–10 μm response range are reported on p-GaAs/AlGaAs detectors. The detectors show a spectral response up to 16.5 μm, operating up to a temperature of 330 K where the lh-hh response is superimposed on the free-carrier response. Two characteristic peaks observed between 5–7 μm are in good agreement with corresponding energy separations of the lh and hh bands and thus originated from lh-hh transitions. Results will be useful for designing multi-spectral detection which could be realized on a single p-GaAs structure.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, energy gap, gallium arsenide, III-V semiconductors, infrared detectors

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 07.57.Kp

    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486169

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    P. V. V. Jayaweera, S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan, and Z. R. Wasilewski, Appl. Phys. Lett. 93, 021105 (2008)APPLAB000093000002021105000001.

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    H. S. Kim, E. Plis, A. Khoshakhlagh, S. Myers, N. Gautam, Y. D. Sharma, L. R. Dawson, S. Krishna, S. J. Lee, and S. K. Noh, Appl. Phys. Lett. 96, 033502 (2010)APPLAB000096000003033502000001.

    D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, and A. G. U. Perera, J. Appl. Phys. 96, 4588 (2004)JAPIAU000096000008004588000001.

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    S. G. Matsik, P. V. V. Jayaweera, A. G. U. Perera, K. K. Choi, and P. Wijewarnasuriya, J. Appl. Phys. 106, 064503 (2009)JAPIAU000106000006064503000001.


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