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Applied Physics Letters / Volume 97 / Issue 9 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 091105 (2010); http://dx.doi.org/10.1063/1.3484143 (3 pages)

Coulomb effect inhibiting spontaneous emission in charged quantum dot

Kamil Gradkowski1, Tomasz J. Ochalski1, Nicola Pavarelli1, David P. Williams1, Guillaume Huyet1, Baolai Liang2, and Diana L. Huffaker2

1Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland and Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland
2Department of Electrical Engineering, California NanoSystems Institute, University of California, Los Angeles, California 90095, USA

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(Received 11 June 2010; accepted 7 August 2010; published online 2 September 2010)

We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum well in a tunnel injection scheme by means of time-resolved photoluminescence. Under high-power excitation we observe a redshift in the QD emission of the order of 20 meV. The optical transition intensity shows a complex evolution, where an initial plateau phase is followed by an increase in intensity before a single-exponential decay. We attribute this behavior to the Coulomb interactions between the carriers in a charged QD and corroborate the experimental results with both a rate equation model and self-consistent eight-band k⋅p calculations.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

Coulomb blockade, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, red shift, semiconductor quantum dots, semiconductor quantum wells, time resolved spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3484143

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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