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Appl. Phys. Lett. 97, 091902 (2010); http://dx.doi.org/10.1063/1.3485297 (3 pages)

Accurate ab initio predictions of III–V direct-indirect band gap crossovers

Jeremy W. Nicklas and John W. Wilkins

Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

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(Received 16 May 2010; accepted 12 August 2010; published online 30 August 2010)

We report the compositional dependence of the electronic band structure for a range of III–V alloys. Standard density functional theory is insufficient to mimic the electronic gap energies at different symmetry points of the Brillouin zone. The Heyd–Scuseria–Ernzerhof hybrid functional with screened exchange accurately reproduces the experimental band gaps and, more importantly, the alloy concentration of the direct-indirect gap crossovers for the III–V alloys studied here: AlGaAs, InAlAs, AlInP, InGaP, and GaAsP.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 71.20.Nr

    Semiconductor compounds

  • 71.15.Mb

    Density functional theory, local density approximation, gradient and other corrections

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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