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Applied Physics Letters / Volume 97 / Issue 9 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 091903 (2010); http://dx.doi.org/10.1063/1.3483839 (3 pages)

Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

Yuxin Song (宋禹忻)1, Shumin Wang1, Zonghe Lai2, and Mahdad Sadeghi2

1Department of Microtechnology and Nanoscience, Photonics Laboratory, Chalmers University of Technology, SE-41296 Göteborg, Sweden
2Department of Microtechnology and Nanoscience, Nanofabrication Laboratory, Chalmers University of Technology, SE-41296 Göteborg, Sweden

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(Received 19 April 2010; accepted 9 August 2010; published online 31 August 2010)

Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, buffer layers, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum wells, semiconductor superlattices

PACS

  • 78.67.De

    Quantum wells

  • 78.67.Pt

    Multilayers; superlattices; photonic structures; metamaterials

  • 78.55.Cr

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3483839

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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