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Appl. Phys. Lett. 97, 091907 (2010); http://dx.doi.org/10.1063/1.3485049 (3 pages)

Hydrogen related defect complexes in ZnO nanoparticles

K. Senthilkumar1, M. Tokunaga1, H. Okamoto1, O. Senthilkumar2, and Y. Fujita1

1Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan
2Research Project Promotion Institute, Shimane University, Matsue 690-8504, Japan

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(Received 22 June 2010; accepted 11 August 2010; published online 2 September 2010)

Hydrogen related local vibrational modes (LVMs) of ZnO nanoparticles have been studied using Fourier transform infrared spectroscopy and Raman spectroscopy in as prepared and high temperature annealed samples. The obtained experimental results confirm the presence of cationic vacancies (VZn) in addition to unintentional hydrogen doping and their complex defects such as VZn–Hi and VZn–HO. After high temperature annealing, hydrogen related LVMs and multiphonon modes disappear. The presence of these complex defects determines the nonradiative and multiphonon recombination processes in the band gap of ZnO due to carrier trapping at deep levels.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.55.Et

    II-VI semiconductors

  • 78.66.Hf

    II-VI semiconductors

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 63.22.-m

    Phonons or vibrational states in low-dimensional structures and nanoscale materials

  • 61.72.jd

    Vacancies

  • 71.55.Gs

    II-VI semiconductors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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