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Applied Physics Letters / Volume 97 / Issue 9 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 091909 (2010); http://dx.doi.org/10.1063/1.3481381 (3 pages)

Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1−xInxAsySb1−y

R. Cuscó, J. Ibáñez, and L. Artús

Institut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain

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(Received 22 June 2010; accepted 1 August 2010; published online 3 September 2010)

We report a Raman scattering determination of the energy difference EΓ−L between the Γ conduction-band minimum and the L valley minima in n-type Ga1−xInxAsySb1−y lattice matched to GaSb (x = 0.15, y = 0.13). A frequency downshift in the L+ phonon–plasmon coupled mode is observed between 80 K and room temperature that is attributed to electron transfer from the Γ to the L valleys. We use the L+ frequency shift to evaluate EΓ−L by performing Lindhard–Mermin L+ line-shape fits for different EΓ−L values. The EΓ−L value increases with electron concentration due to band gap renormalization. A value EΓ−L = 154 meV is derived for intrinsic material.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

charge transfer states, conduction bands, electron density, energy gap, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, phonon-plasmon interactions, Raman spectra, renormalisation, semiconductor epitaxial layers

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481381

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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