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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092101 (2010); http://dx.doi.org/10.1063/1.3481376 (3 pages)

Annealing induced anomalous electrical transport behavior in SnO2 thin films prepared by pulsed laser deposition

C. Ke1, Z. Yang1, J. S. Pan2, W. Zhu1, and L. Wang3

1Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
2Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore 117602
3Division of Physics and Applied Physics, School of Physical and Mathematical Science, Nanyang Technological University, Nanyang Link 21, Singapore 637371

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(Received 7 May 2010; accepted 29 July 2010; published online 30 August 2010)

SnO2 thin films were deposited on quartz substrates by pulsed laser deposition and postannealed at different temperatures in oxygen ambience. X-ray diffraction, Hall measurement, and x-ray photoelectron spectroscopy were employed to investigate the properties of the annealed SnO2 thin films. An anomalous electrical transport behavior as a function of the annealing temperature was observed. Both the growth of the crystal grain and oxygen vacancy density variation in the annealing process have been identified to be responsible for the transition of electrical transport properties.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, grain growth, Hall effect, pulsed laser deposition, semiconductor growth, semiconductor thin films, tin compounds, wide band gap semiconductors, X-ray diffraction, X-ray photoelectron spectra

PACS

  • 73.61.Le

    Other inorganic semiconductors

  • 79.60.Bm

    Clean metal, semiconductor, and insulator surfaces

  • 81.15.Fg

    Pulsed laser ablation deposition

  • 81.40.Ef

    Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481376

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    C. Ke, Z. Yang, W. Zhu, J. S. Pan, and S. Karamat, J. Appl. Phys. 107, 013515 (2010)JAPIAU000107000001013515000001.

    Z. Z. Yuan, D. S. Li, M. H. Wang, P. L. Chen, D. R. Gong, P. H. Cheng, and D. R. Yang, Appl. Phys. Lett. 92, 121908 (2008)APPLAB000092000012121908000001.

    R. Dolbec and M. A. El Khakani, Appl. Phys. Lett. 90, 173114 (2007)APPLAB000090000017173114000001.

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    J. E. Dominguez, L. Fu, and X. Q. Pan, Appl. Phys. Lett. 81, 5168 (2002)APPLAB000081000027005168000001.

    J. M. D. Coey, A. P. Douvalis, C. B. Fitzgerald, and M. Venkatesan, Appl. Phys. Lett. 84, 1332 (2004)APPLAB000084000008001332000001.

    H. Lu, J. S. Pan, X. F. Chen, W. G. Zhu, and O. K. Tan, Appl. Phys. Lett. 88, 132907 (2006)APPLAB000088000013132907000001.


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