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Appl. Phys. Lett. 97, 092102 (2010); http://dx.doi.org/10.1063/1.3477951 (3 pages)

Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

T. A. Wassner1, B. Laumer1,2, M. Althammer3, S. T. B. Goennenwein3, M. Stutzmann1, M. Eickhoff2, and M. S. Brandt1

1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
2I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
3Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching, Germany

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(Received 25 May 2010; accepted 20 July 2010; published online 30 August 2010)

Zn1−xMgxO thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn1−xMgxO epitaxial layers and their anisotropy were determined experimentally and an increase from g = 1.957 for x = 0 to g = 1.970 for x = 0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the AlxGa1−xN system is also given.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 68.55.ag

    Semiconductors

  • 76.30.-v

    Electron paramagnetic resonance and relaxation

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 81.05.Dz

    II-VI semiconductors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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